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Vishay Siliconix IRFD210PBF MOSFET N-CH 200V 600MA 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD210PBF	Bulk	4,761		1	1 $1.93 10 $1.23 100 $1.93 1000 $0.60233 10000 $0.54256	Buy Now
RS	IRFD210PBF	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.93	Get Quote
Bristol Electronics	IRFD210PBF		1,350			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	IRFD210PBF		4,050			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IRFD210PBF		1,500		1	1 - 10 - 100 $0.6431 1000 $0.6431 10000 $0.6431	Buy Now
Vishay Siliconix IRFD213 MOSFET N-CH 250V 450MA 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD213	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC IRFD213 MOSFET N-CH 250V 450MA 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD213	Tube			468	1 - 10 - 100 - 1000 $0.64 10000 $0.64	Buy Now
Vishay Siliconix IRFD210 MOSFET N-CH 200V 600MA 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD210	Tube			2,500	1 - 10 - 100 - 1000 - 10000 $1.1875	Buy Now
Bristol Electronics	IRFD210		16			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFD210		988			1 $1.75 10 $1.75 100 $0.525 1000 $0.455 10000 $0.455	Buy Now
Rochester Electronics LLC IRFD210 0.6A 200V 1.500 OHM N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD210	Bulk			329	1 - 10 - 100 - 1000 $0.91 10000 $0.91	Buy Now

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IRFD21 Datasheets (80)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFD210	Intersil	0.6A, 200V, 1.500 ?, N-Channel Power MOSFET	Original	PDF
IRFD210	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFD210	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 600MA 4-DIP	Original	PDF
IRFD210	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFD210	Harris Semiconductor	0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS	Scan	PDF
IRFD210	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFD210	International Rectifier	Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)	Scan	PDF
IRFD210	International Rectifier	HEXFET Power MOSFETs	Scan	PDF
IRFD210	International Rectifier	Plastic Package HEXFETs	Scan	PDF
IRFD210	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFD210	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, .6A, Pkg Style HEXDIP	Scan	PDF
IRFD210	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFD210	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
IRFD210	Motorola	Switchmode Datasheet	Scan	PDF

IRFD210	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFD210	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFD210	Unknown	FET Data Book	Scan	PDF
IRFD210	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFD210	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFD210	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFD21 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFD210 Abstract: TB334 Text: IRFD210 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	Original	PDF	IRFD210 TB334 TA17442. IRFD210 TB334
IRFD210 Abstract: No abstract text available Text: IRFD210 Data Sheet Title FD 0 bt 6A, 0V, 00 m, an- 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are	Original	PDF	IRFD210 TB334 IRFD210
IRFD214 Abstract: n mosfet low vgs Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT	Original	PDF	IRFD214, SiHFD214 2002/95/EC 18-Jul-08 IRFD214 n mosfet low vgs
Untitled Abstract: No abstract text available Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT	Original	PDF	IRFD214, SiHFD214 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRFD210, SiHFD210 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFD214_RC, SiHFD214_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFD214 SiHFD214 AN609, 25-Oct-10 5141m 6847m 6431m
IRFD120 Abstract: No abstract text available Text: PD- 95931 IRFD214PbF Lead-Free Document Number: 91130 10/29/04 www.vishay.com 1 IRFD214PbF Document Number: 91130 www.vishay.com 2 IRFD214PbF Document Number: 91130 www.vishay.com 3 IRFD214PbF Document Number: 91130 www.vishay.com 4 IRFD214PbF Document Number: 91130	Original	PDF	IRFD214PbF IRFD120 IRFD120
7105 Abstract: IRFD120 marking tac Text: PD- 95931 IRFD214PbF Lead-Free www.irf.com 1 10/29/04 IRFD214PbF 2 www.irf.com IRFD214PbF www.irf.com 3 IRFD214PbF 4 www.irf.com IRFD214PbF www.irf.com 5 IRFD214PbF 6 www.irf.com IRFD214PbF www.irf.com 7 IRFD214PbF Hexdip Package Outline Dimensions are shown in millimeters inches	Original	PDF	IRFD214PbF IRFD120 7105 IRFD120 marking tac
Untitled Abstract: No abstract text available Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRFD210, SiHFD210 2002/95/EC 18-Jul-08
SiHFD210 Abstract: No abstract text available Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRFD210, SiHFD210 12-Mar-07
Untitled Abstract: No abstract text available Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRFD210, SiHFD210 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer	Original	PDF	IRFD214 08-Mar-07
IRFD214 Abstract: SiHFD214 Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT	Original	PDF	IRFD214, SiHFD214 18-Jul-08 IRFD214
SiHFD214 Abstract: No abstract text available Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT	Original	PDF	IRFD214, SiHFD214 18-Jul-08

SiHFD214 Abstract: No abstract text available Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT	Original	PDF	IRFD214, SiHFD214 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: • 4302271 0054105 T20 ■ 23 HARRIS HAS IRFD210/211/212/213 IRFD21 OR/211R/212R/213R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1991 Features Package 4 -P IN D IP • 0.6A and 0.45A, 1SOV - 200V TOP VIEW • rDS on = 1-5 fl an(l 2-4 fl • Single Pulse Avalanche Energy Rated*	OCR Scan	PDF	IRFD210/211/212/213 IRFD21 OR/211R/212R/213R IRFD210, IRFD211, IRFD212, IRFD213 IRFD210R, IRFD211R, IRFD212R,
1RFD210 Abstract: IRFD210 Text: International [rag Rectifier PD-9.386G IRFD210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = 2 0 0 V	OCR Scan	PDF	IRFD210 1RFD210
Untitled Abstract: No abstract text available Text: IRFD210 Semiconductor Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1-500i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	OCR Scan	PDF	IRFD210 1-500i2 TA17442. TB334
C38 06 DIODE Abstract: D82BN2 Text: IRFD210,211 D82BN2.M2 FIT HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged ness and reliability. 0.6 AMPERES	OCR Scan	PDF	IRFID210 D82BN2 C38 06 DIODE
IRFD210 Abstract: diode 3a05 IRFD213 Text: IRFD210, IRFD213 « I S ilic o n ix J-W in c o rp o ra te d N-Channel Enhancement Mode Transistors "'Z°i-OS 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY PART NUMBER V(BR\|DSS fDS(ON) (n> Id (A) 1RFD210 200 1.5 0.60 IRFD213 150 2.4 0.45 1 Œ s 2 CC	OCR Scan	PDF	IRFD210, IRFD213 O-250) 1RFD210 IRFD213 IRFD210 diode 3a05
IRFD Abstract: IRFD210 D210 IRFD211 IRFD212 IRFD213 Text: Standard Power MOSFETs- IRFD210, IRFD211, IRFD212, IRFD213 File Number 2316 Power M O S Field-Effect Transistore N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistore 0.45 A and 0.6 A, 150 V - 200 V	OCR Scan	PDF	IRFD210, IRFD211, IRFD212, IRFD213 92CS-33741 IRFD213 IRFD IRFD210 D210 IRFD211 IRFD212
relay ras 1210 Abstract: tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R IRFD212R IRFD213R 03a s4 Text: Rugged Pow er M O SFETs File Num ber 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V rDS o n = 1 .5 0 a nd 2 .4 0 N-CHANNEL ENHANCEMENT MODE	OCR Scan	PDF	IRFD210R, IRFD211R, IRFD212R, IRFD213R 50V-200V 2CS-42CSÂ IRFD212R IRFD213R relay ras 1210 tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R 03a s4
TB334 Abstract: IRFD210 IRFD211 IRFD212 IRFD213 rfd2 Text: i H A R R IRFD210, IRFD211, IRFD212, IRFD213 i s s e m i c o n d u c t o r 0.6A and 0.45A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.6A and 0.45A, 150V and 200V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and	OCR Scan	PDF	IRFD210, IRFD211, IRFD212, IRFD213 TB334 TB334 IRFD210 IRFD211 IRFD212 IRFD213 rfd2
irfd211 Abstract: No abstract text available Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IR FD 210 IRFD211 IRFD212 IRFD213 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 1.5 O HM 200 VOLTS T h e s e T M O S F E T s a r e d e s ig n e d f o r lo w v o lt a g e , h ig h	OCR Scan	PDF	IRFD211 IRFD212 IRFD213

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IRFD21 Datasheets (80)

IRFD21 Datasheets Context Search

IRFD210

IRFD210

IRFD214

Untitled

Untitled

Untitled

IRFD120

7105

Untitled

SiHFD210

Untitled

Untitled

IRFD214

SiHFD214

SiHFD214

Untitled

1RFD210

Untitled

C38 06 DIODE

IRFD210

IRFD

relay ras 1210

TB334

irfd211