IRFF430 Search Results

IRF 3302

Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
Contextual Info: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited

2N6802

Abstract: IRFF430
Contextual Info: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

Contextual Info: • 430 5 57 1 0 0 S 4 1Ô D 701 ■ [g HARRIS HAS IRFF430/431/432/433 IRFF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 5 A F • 2 .2 5 A a n d 2 .7 5 A , 4 5 0 V - 5 0 0 V • rD S o n = and 2 .0 fl

TA17415

Abstract: IRFF430 TB334
Contextual Info: IRFF430 Data Sheet March 1999 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET • 2.75A, 500V Formerly developmental type TA17415. Ordering Information IRFF430 PACKAGE TO-205AF 1894.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRF 725

Abstract: IRFF430 JANTX2N6802 JANTXV2N6802
Contextual Info: PD -90433C IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-PRF-19500/557 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A  The HEXFET technology is the key to International

SMM70N06

Abstract: SMM70N05 SMP2P20 SMM60N05 SILICONIX 4800 SMM11P20 IBFF333 IRFF313 SMD10P05L IRFF320
Contextual Info: - 324 - f ft A £ Ta=25‘C Vds Vg s or * Vd g Id t M € *± € * IRFF312 IRFF313 IRFF320 IRFF321 IRFF322 IRFF323 IRFF33Q IRFF331 IRFF332 IRFF333 IRFF430 IRFF431 IRFF432 IRFF433 MOD1QOA/B/C MOD200A/B/C MQD400A/B/C MOD5QOA/B/C SMD10P05 SMD10P05L SMD15NQ5

7551-1

Contextual Info: MOTOROLA SC XSTRS/R F 15E D | 131,75511 00flb7Q7 b | T - ll- V I IRFF430 IRFF433 CASE 79-05, STYLE 6 TO-39 TO-205AF M A X IM U M RATINGS Sym bol IRFF430 IRFF433 D ra in-S ou rce V oltag e V d SS 500 450 Vdc D rain-G ate V o lta g e (R q s - 1*0 m il) V d GR

MOSFET

Abstract: 2N6802
Contextual Info: t^ejm.l-donJ.uatot. tPioduati, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE POWER MOSFET BV DSS D(cont)

Contextual Info: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

Contextual Info: IRFF430, IRFF431, IRFF432, IRFF433 S E M I C O N D U C T O R 2.25A and 2.75A, 450V to 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.25A and 2.75A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFF430

Abstract: IRFF431 TD-205A
Contextual Info: Fm? HELD EFFECT POWER TRANSISTOR IRFF430,431 2.75 AMPERES 500, 450 VOLTS RDS ON = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

Contextual Info: i H A R R IRFF430, IRFF431, IRFF432, IRFF433 i s s e m i c o n d u c t o r 2.25A and 2.75A, 450V to 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs July 1998 Description Features 2.25A and 2.75A, 450V and 500V High Input Impedance These are N-Channel enhancement mode silicon gate

IRFF430R

Abstract: IRFF431R IRFF432R IRFF433R
Contextual Info: Rugged Power MOSFETs File Number 2031 IRFF430R, IRFF431R, IRFF432R, IRFF433R Avalanche Energy Rated N-Channel Power MOSFETs 2.25A and 2.75A, 450V-500V fDs on = 1 .50 and 2.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SO A is power-dissipation lim ited

DIODE 433

Abstract: tl 431 R 433 A F433 IRFF430 IRFF431 IRFF432 IRFF433 AC15A
Contextual Info: SILICÔNIX INC IflE D "Silicon_ • ÔHS473S G ü m ô S Î 0 ■ IRFF430/431/432/433 incorporated Xf^ VTSiliconix ¡1 N-Channel Enhancement Mode Transistors TVZPi-D0! TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS "W> Id (A IRFF430 500 1.5 2.75

Contextual Info: PD -90433C IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-PRF-19500/557 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A  The HEXFET technology is the key to International

Contextual Info: IRFF430 Data Sheet Title FF4 bt 75A 00V, 00 m, March 1999 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: i h ” a r r i IRFF430, IRFF431, IRFF432, IRFF433 s “ I C O N D U C T O E 2.25A and 2.75A, 450V to 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.25A and 2.75A, 450V and 500V These are N-Channel enhancement mode silicon gate

432r

Contextual Info: 53 HARRIS IR FF430/431/432/433 IRFF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 5 A F • 2 .2 5 A and 2 .7 5A , 4 5 0 V - 5 0 0V • rD S on = 1 - 5 0 and 2 .0 fl • Single Pulse A valanche Energy R ated*

Contextual Info: IRFF430 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

2N6788 motorola

Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
Contextual Info: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.