IRFU220 Search Results

IRFR220N

Abstract: AN1001 AN-994 IRFU220N
Contextual Info: PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFR220N IRFU220N D-Pak IRFR22ON I-Pak IRFU220N Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRFR220N

Abstract: IRF AN1001 AN1001 AN-994 IRFU220N
Contextual Info: PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

FR220

Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Contextual Info: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated

IRFU220

Abstract: IRFR220 U222 irfu220 samsung J50V IRFR222 G31* Diode B51A 222 diode
Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7 *lh4m S IKFH220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 0 Q 1 2 3 MG ITS « S H G K D-PACK Lower Rds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

fu220

Abstract: IRFR220A POWER MOSFET -N-CHANNEL
Contextual Info: N-CHANNEL POWER MOSFETS IRFR220/221 IRFU220/221 FEATURES • Low er R d s ON • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input cap acitance • Extended safe operating area • Improved high tem perature reliability

AN1001

Abstract: EIA-541 IRFU120 IRFU220N R120 U120 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: International ÜÔSSMSS 001 Sb7 b Ö40 • INR i“R Rectifier PD-9.525D IRFR220 IRFU220 HEXFET Power M O SFET bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR220 Straight Lead (IRFU220) Available in Tape & Reel

Contextual Info: 11E D | INTERNATIONAL R E C T I F I E R 4055 45 2 0 0 00 3 0 0 4 | Data Sheet No. PD-9.525A T -35-25 IN T E R N A T IO N A L R E C T IF IE R IOR AVALANCHE AND dv/dt RATED HEXFET IRFR220 TRANSISTORS IRFR222 IRFU220 N -C H A N N E L IRFU222 Product Summary 200 Volt, 0.80 Ohm HEXFET

IRFR220

Abstract: IRFU220 SiHFR220 SiHFR220-E3
Contextual Info: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 0.80 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR220/SiHFR220) Qgs (nC)

Contextual Info: PD - 95069A IRFR220PbF IRFU220PbF • Lead-Free Document Number: 91270 12/14/04 www.vishay.com 1 IRFR/U220PbF Document Number: 91270 www.vishay.com 2 IRFR/U220PbF Document Number: 91270 www.vishay.com 3 IRFR/U220PbF Document Number: 91270 www.vishay.com 4

Contextual Info: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21

IRFR220

Abstract: IRFU220 SiHFR220 SiHFR220-E3
Contextual Info: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 0.80 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR220, SiHFR220) Qgs (nC)

ifr220

Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
Contextual Info: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate

Contextual Info: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRFR220B

Abstract: IRFU220B
Contextual Info: IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

TO-251AA

Abstract: ipak
Contextual Info: International H EXFET Power MOSFETs H^IRectìfier I-Pak I-Pak TO-251A A N-Channel Part Number IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 V(BR)DSS Drain-to-Source R DS(on) I q Continuous Breakdown On-State Drain Current

Contextual Info: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

ifr220

Abstract: IFU220 JEDEC TO-251AA IRFR220 IRFU220 TA9600 TB334
Contextual Info: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

82991

Abstract: IRFR220TRPBF IRFR220 IRFU220 SiHFR220 SiHFR220-E3
Contextual Info: IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 0.80 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR220, SiHFR220) Qgs (nC)