IRGAC30U Search Results

IG22

Abstract: IRGAC50U
Contextual Info: Government and Space Other Products from IR IGBT Hermetic Packages 6 0 0 - 1200V V BR CES v GE(th) MIN (V) (V) Part Number IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U IRGMC30F IRGMC30U IRGMC40F IRGMC40U IRGMC50F IRGMC50U 600 3.0 Ej s TY P ic @ •c@

Contextual Info: IRGAC30U Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)17 Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.67 Thermal Resistance Junc-Amb.30 g(fe) Min. (S) Trans. admitt.3.1

Contextual Info: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRGAC50

Abstract: MO036AA IRGAC50U IRGAC50F
Contextual Info: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)

Ig21

Contextual Info: International Government and Space ig b t HORlRecBfier Hermetic Packages 6 0 0 -1200V V BR CES Part Number (V) v GE(th) MIN (V) ic @ ic @ v GE(th) M AX TC = 25°C TC = 100°C (V) E t s TY P PD Max. Power Outline Tj = 125 Dissipation Number (m J) (A) IRGAC30F