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    Infineon Technologies AG IRHE9110SCS-01

    Transistor MOSFET P-Channel 100V 2.3A 18-Pin LCC - Bulk (Alt: IRHE9110SCS-01)
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    IRHE9110 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHE9110 International Rectifier POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18) Original PDF

    IRHE9110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD-97180 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE9110 100V - P CHANNEL RAD-HardTM HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE9110 100K Rads (Si) IRHE93110 300K Rads (Si) RDS(on) ID 1.1Ω -2.3A 1.1Ω -2.3A LCC - 18


    Original
    PDF PD-97180 LCC-18) IRHE9110 IRHE93110 -100V, -12volt MIL-STD-750, -80volt MlL-STD-750,

    IRHE9110

    Abstract: IRHE93110 LCC-18
    Text: PD-97180 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE9110 100V - P CHANNEL RAD-HardTM HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE9110 100K Rads (Si) IRHE93110 300K Rads (Si) RDS(on) ID 1.1Ω -2.3A 1.1Ω -2.3A LCC - 18


    Original
    PDF PD-97180 LCC-18) IRHE9110 IRHE93110 -100V, -12volt MIL-STD-750, -80volt MlL-STD-750, IRHE9110 IRHE93110 LCC-18

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original
    PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original
    PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    IRHNJ597230SCS

    Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
    Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5


    Original
    PDF 4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS