IRHN9150 Search Results

IRHN9150

Abstract: IRHN93150 JANSF2N7422U JANSR2N7422U
Contextual Info: PD - 90885E IRHN9150 JANSR2N7422U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9150 100K Rads (Si) IRHN93150 300K Rads (Si) RDS(on)

Contextual Info: International lö R Rectifier Provisional Data Sheet No. PD-9.885A R EP ET ITIV E A V A L A N C H E IRHN9150 A N D dv/dt R A T E D HEXFET TRANSISTOR p -ch a n n e l RAD HARD -100 Volt, 0.1200 , RAD HARD HEXFET Product Summary International Rectifier’s P-channel RAD HARD tech­

Contextual Info: PD - 90885F IRHN9150 JANSR2N7422U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9150 100K Rads (Si) IRHN93150 300K Rads (Si) RDS(on)

transistor C456

Abstract: smd transistor NG c456 transistor
Contextual Info: Provisional Data Sheet No. PD - 9.885B International l ö R Rectifier IRHN9150 IRHN93150 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P-CHANNEL RAD HARD -100Volt, 0 .075^ , RAD HARD HEXFET International R e ctifie r’s P -C hannel RAD H AR D te c h ­

Contextual Info: PD-90885G IRHN9150 JANSR2N7422U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9150 100K Rads (Si) IRHN93150 300K Rads (Si) RDS(on)

IRHN9150

Abstract: IRHN93150 JANSF2N7422U JANSR2N7422U
Contextual Info: PD - 90885F IRHN9150 JANSR2N7422U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9150 100K Rads (Si) IRHN93150 300K Rads (Si) RDS(on)

2N7422

Abstract: 2N7422U IRHN9150 2N742 IRHN93150 JANSF2N7422U
Contextual Info: PD - 90885C IRHN9150 IRHN93150 JANSR2N7244U JANSF2N7422U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR REF:MIL-PRF-19500/662 P-CHANNEL Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRHN9150

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.885 IRHN9150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.120Ω Product Summary International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold

IRHN9150

Abstract: p-chan 10a surface mount IRHN93150
Contextual Info: Provisional Data Sheet No. PD - 9.885B IRHN9150 IRHN93150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100Volt, 0.075Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold

JANSF2N7422U

Abstract: IRHN9150 IRHN93150 JANSR2N7422U
Contextual Info: PD - 90885D IRHN9150 JANSR2N7422U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9150 100K Rads (Si) RDS(on) 0.080Ω ID -22A QPL Part Number

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

H-341

Contextual Info: Data Sheet No. PD-9.885 INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN915Q RAD HARD -100 Volt, 0.120 2, RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

2n7425

Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Contextual Info: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

IRHE7110

Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Contextual Info: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _