2SC5006
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to
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PA821TC
2SC5006)
PA821TC
IS21el2
PA821TC-T1
2SC5006
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2SC5006
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d5611
Abstract: NEC d7001 d5611 pin d16803 D1347 d5023 TRANSISTOR D5022 D9328 D1275 D1450
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )
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2SC4394
IS21el2
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE VHF'UHF 2SC3268 BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : L 6 MAX 4.6 max . . NF=1.7dB, IS21el2=15.0dB f=500MHz . NF=2dB, |S2Xel2=9.5dB (f=1000MHz) + 0108 MAXIMUM RATINGS (Ta=25°C) (145 — Cl05 CHARACTERISTIC
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2SC3268
IS21el2
500MHz)
1000MHz)
a4-a05
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3606 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications -El- F e a tu re s • Low Noise Figure, High Gain • N F = 1 .1 d B , IS21el2 = 1 1 d B f = 1GHz -EE- A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )
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2SC3606
IS21el2
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2SC4392
Abstract: No abstract text available
Text: 2SC4392 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r U H F - C B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • • U n it in mm High Gain : IS21el2= 12dB Typ. Low Noise Figure: NF = 2.3dB (Typ.) High frp : fr = 6.5GHz(Typ.) M A X IM U M R A TIN G S (Ta = 25°C)
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2SC4392
IS21el2=
SC-70
S21el2
2SC4392
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4317 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • Low Noise Figure, High Gain • NF = 1.1dB, IS21el2 = 1 3 d B f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )
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2SC4317
IS21el2
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tt 18934
Abstract: 30i sot23 5140 SN 74500
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z
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IS21El2
IS21EI2
NE686
NE68618-T1
NE68619-T1
NE68630-T1
NE68633-T1
tt 18934
30i sot23
5140
SN 74500
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marking 93A
Abstract: transistor marking code 1325 b 11061
Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1086
OT-23
900MHz
marking 93A
transistor marking code 1325
b 11061
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1494
OT-323
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1049
OT-23
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C
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Q62702-F102
OT-23
IS21el2
IS21/S
aS35bG5
Giai71b
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs
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BFP183R
Q62702-F1594
OT-143R
76VBE
900MHz
a535fc
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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BFQ70
Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VCE051S1
Q62702-F774
fi23SbOS
0Gb7117
BFQ70
zo 107 NA
BFq 98
transistor zo 109
zo 107 MA
ST2C
VCE051S1
bfq 85
zo 107
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2SC4365
Abstract: 2SC4402 SK200
Text: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V
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2SC4402-applied
2SC4365
2SC4402
SK200
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 180 NPN S ilicon RF T ransistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2 .1 d B at 900MHz BFP 180 RDs Q62702-F1377 1 =C 2=E 3=B II m ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1377
OT-143
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BF 182 transistor
Abstract: transistor 182 marking code M21
Text: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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900MHz
OT-143
Q62702-F1396
BF 182 transistor
transistor 182
marking code M21
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR 25E CORP ? clei707b OOObfibS D 2SC4401 S T - 3 h l7 # NPN Epitaxial Planar Silicon Transistor 2059 2754 V/U M IX, OSC, Low-Voltage Amp Applications A pplications • VHF/UHF MIX/OSC, Iow-voltage high-frequency amplifiers Features • Low-voltage operation
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i707b
2SC4401
2SC4401-applied
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code
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Q62702-F1316
OT-23
fl235L
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM
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Q62702-F1519
OT-323
IS21el2
G12171D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP196 NPN S ilico n RF T ra n sisto r • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz
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BFP196
900MHz
Q62702-F1320
OT-143
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 2EE D T W D T b OOObfl? 1 2SC4404 T -3 I-IS # N PN Epitaxial Planar Silicon Transistor 2069 2757 UHF Local OSC, Wide-Band Amp Applications A p p lic a tio n s • U H F OSC, wide-band am plifiers F e a tu re s f f —5.0GHz typ
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2SC4404
2SC4404-applied
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