IS61LV256 Search Results

Contextual Info: m IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM i Fe b r u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable pro­

IS61LV25616

Contextual Info: ISSI IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES NOVEMBER 2001 DESCRIPTION The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static • High-speed access time: — 10, 12, and 15 ns • CMOS low power operation

Contextual Info: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM April 2004 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby

IS61LV25616-12T

Contextual Info: IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • • • • • High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh

IS61LV25616

Contextual Info: ISSI IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES AUGUST 2000 DESCRIPTION The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static • High-speed access time: — 7, 8, 10, 12, and 15 ns • CMOS low power operation

IS61LV25616

Contextual Info: ISSI ISSI IS61LV25616 IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, and 15 ns • CMOS low power operation — 60 mW typical operating — 6 µW (typical) CMOS standby • TTL compatible interface levels

Contextual Info: ISSI IS61LV25616L 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DECEMBER 2001 FEATURES DESCRIPTION The ISSI IS61LV25616L is a high-speed, 4,194,304-bit static • High-speed access time: — 10, 12, and 15 ns • Low Active Power — Less than 90mA typ. Active Current

Contextual Info: ISSI IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES ADVANCE INFORMATION NOVEMBER 1999 DESCRIPTION The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static • • • • • High-speed access time: 10, 12, and 15 ns

Contextual Info: IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM AUGUST 2009 FEATURES •฀ High-speed฀access฀times:฀ — 10 ns •฀ Automatic฀power-down฀when฀chip฀is฀deselected •฀ CMOS฀low฀power฀operation — 60 µW฀ typical ฀CMOS฀standby

IS61LV25616AL

Contextual Info: ISSI IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEBRUARY 2003 DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power:

IS61LV25616AL

Abstract: 61LV25616AL is61lv25616al-10tli IS61LV25616AL-10TL IS61LV25616AL-10BI IS61LV25616AL10TL IS61LV25616AL-10KLI IS61LV25616AL-10BLI is61lv25616al-10lqli
Contextual Info: IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DECEMBER 2011 DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power:

IS61LV256

Abstract: IS61LV256-10J IS61LV256-10T IS61LV256-12J IS61LV256-12T IS61LV256-8J IS61LV256-8T IS61LV256-12TLI IS61LV256-15JL is61lv25615jl
Contextual Info: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM June 2005 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels

Contextual Info: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION AUGUST 2002 FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 25mA (typ.)

Contextual Info: IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • • • • • High-speed access time: 10, 12, and 15 ns CMOS low power operation TTL compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh

IS61LV2568

Abstract: IS61LV2568-10K IS61LV2568-10T IS61LV2568-12K IS61LV2568-12T IS61LV2568-8K IS61LV2568-8T
Contextual Info: ISSI IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 and 15 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

IS61LV25616AL-10TL

Abstract: is61lv25616al-10tli IS61LV25616AL IS61LV25616AL-10KLI IS61LV25616AL10TL 10lQ
Contextual Info: ISSI IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEBRUARY 2006 DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power:

Contextual Info: ISSI IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • NOVEMBER 2004 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)

Contextual Info: ISSI IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2005 FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 µW typical CMOS standby — 65 mW (typical) operating

Contextual Info: IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • • APRIL 2008 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)

LV25616

Abstract: Z639 IS61LV25616 LV2561 IZ21
Contextual Info: IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, and 15 ns • CMOS low power operation — 60 mW typical operating — 6 |^W (typical) CMOS standby • TTL compatible interface levels

HA1328

Contextual Info: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM Fe b r u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns T he [S S I IS 61LV 256 is a ve ry high-speed, low power, 32,768-w ord by 8-bit static RAM . It is fabricated using ¡SSI's

IS61LV2568L

Abstract: IS61LV2568L-8B IS61LV2568L-8K IS61LV2568LL S61LV256
Contextual Info: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 30mA (typ.) • Standby Current: IS61LV2568L: 700µA (typ.)

Contextual Info: IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: - 8, 10, 12, 15, 20 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels

IS61LV2568L

Abstract: IS61LV2568L-10BI IS61LV2568L-8KI IS61LV2568L-8TI IS61LV2568LL
Contextual Info: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION JUNE 2002 FEATURES FEATURES Continued • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 60mA (typ.) IS61LV2568LL: 25mA (typ.)