IXBF22N300 Search Results
IXBF22N300 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
Original |
IXBF22N300 100ms 22N300 3-10-14-A |