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    IXFK88N30P Search Results

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    IXFK88N30P Price and Stock

    Littelfuse Inc IXFK88N30P

    MOSFET N-CH 300V 88A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK88N30P Tube 596 1
    • 1 $14.65
    • 10 $14.65
    • 100 $14.65
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    RS IXFK88N30P Bulk 8 Weeks 25
    • 1 -
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    • 100 $13.82
    • 1000 $13.82
    • 10000 $13.82
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    IXYS Corporation IXFK88N30P

    MOSFETs 88 Amps 300V 0.04 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFK88N30P 277
    • 1 $14.65
    • 10 $13.36
    • 100 $8.93
    • 1000 $8.93
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    Newark IXFK88N30P Bulk 1
    • 1 $15.24
    • 10 $12.66
    • 100 $10.04
    • 1000 $10.04
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    Future Electronics IXFK88N30P Tube 40 Weeks 300
    • 1 -
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    • 100 $8.88
    • 1000 $8.76
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    TTI IXFK88N30P Tube 300
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    • 100 -
    • 1000 $8.93
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    TME IXFK88N30P 5 1
    • 1 $13.62
    • 10 $11.17
    • 100 $10.11
    • 1000 $9.8
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    IXYS Integrated Circuits Division IXFK88N30P

    MOSFET DIS.88A 300V N-CH TO264 HIPERFET THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFK88N30P
    • 1 $16.60009
    • 10 $16.60009
    • 100 $15.5141
    • 1000 $15.5141
    • 10000 $15.5141
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    IXFK88N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK88N30P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 88A TO-264 Original PDF

    IXFK88N30P Datasheets Context Search

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    88N30

    Abstract: IXFH88N30P 88N30P IXFK88N30P diode 300v IXFT88N30P
    Text: IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFT88N30P IXFH88N30P IXFK88N30P 200ns O-268 IXFT88N30P 88N30P 1-18-09-A 88N30 IXFH88N30P IXFK88N30P diode 300v

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFT88N30P IXFH88N30P IXFK88N30P 200ns O-268 IXFT88N30P 88N30P 1-18-09-A