IXFT10N100 Search Results

IXFT10N100 Price and Stock

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IXYS Corporation IXFT10N100 MOSFET N-CH 1000V 10A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT10N100	Tube			30	1 - 10 - 100 $8.43567 1000 $8.43567 10000 $8.43567	Buy Now
Mouser Electronics	IXFT10N100					1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXFT10N100 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
IXFT10N100		IXYS	HiPerFET Power MOSFET		Original	PDF	565.41KB	4
IXFT10N100		IXYS	1000V HiPerFET power MOSFET		Original	PDF	75.52KB	4
IXFT10N100Q		IXYS	HiPerFETTM Power MOSFETs Q Class		Original	PDF	145.94KB	4
IXFT10N100Q		IXYS	HiPerFET Power MOSFET		Original	PDF	145.94KB	4

IXFT10N100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions	OCR Scan	IXFT10N100 IXFT12N100 13N100 10N100 12N100	PDF
IXYS DS 145 Abstract: 13N100 Contextual Info: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS	OCR Scan	IXFT10N100 IXFT12N100 13N100 10N100 12N100 13N100 IXYS DS 145	PDF
13n10 Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS	OCR Scan	IXFT10N100 IXFT12N100 IXFT13N100 10N100 12N100 13N100 13n10	PDF
Contextual Info: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1	PDF
10N100 Abstract: 12N100Q 125OC d 209 l ixfT12N10 10N100Q Contextual Info: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1 10N100 12N100Q 125OC d 209 l ixfT12N10 10N100Q	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF