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    IXYS Corporation IXGH30N60B4

    IGBT 600V 66A 190W TO247
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    IXGH30N60B4 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGH30N60B4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 66A 190W TO247 Original PDF

    IXGH30N60B4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8-8NS

    Abstract: No abstract text available
    Text: Advance Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings


    Original     		PDF IXGH30N60B4 IC110 O-247 338B2 8-8NS

    IXGH30N60B4

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings


    Original     		PDF IXGH30N60B4 IC110 O-247 062in. 338B2 IXGH30N60B4

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT VCES IC110 VCE sat tfi(typ) IXGH30N60B4 Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings


    Original     		PDF IC110 IXGH30N60B4 O-247 338B2