Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXGJ50N60C4D1 Search Results

    IXGJ50N60C4D1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXGJ50N60C4D1

    Abstract: G50N60
    Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXGJ50N60C4D1 IC110 O-247TM E153432 IC110 IF110 50N60C4 0-06-11-A IXGJ50N60C4D1 G50N60 PDF

    G50N60

    Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode VCES = 600V IC110 = 21A VCE sat ≤ 2.50V IXGJ50N60C4D1 (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IC110 IXGJ50N60C4D1 O-247TM E153432 IF110 50N60C4 0-06-11-A G50N60 PDF