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Text: I X Y S CORP IflE D 4bflb22b GOOOfc.34 b PIXYS I X T E 14 N 40 X 4 MAXIMUM RATINGS PER DEVICE IXTE14N40X4 Sym. Drain-Gate Voltage (Rqs = I.OMO)(1) Voss Vdc Vd g r 400 Vdc Vgs Vdc Vgsm ±3 0 V Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25,C)
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4bflb22b
IXTE14N40X4
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f g megamos
Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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ofMIL-S-19500
MIL-M-38510.
f g megamos
megamos
megamos 48
TO220H
ID 48 Megamos
megamos 13
IXGE
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f g megamos
Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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fit55t
Q000563
f g megamos
megamos 13
megamos
IXGE75N100Z
ID 48 Megamos
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