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Littelfuse Inc IXTH12N150 MOSFET N-CH 1500V 12A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH12N150	Tube			1	1 $17.67 10 $17.67 100 $10.983 1000 $9.64075 10000 $9.64075	Buy Now
Verical	IXTH12N150		780		30	1 - 10 - 100 $10.942 1000 $9.621 10000 $9.621	Buy Now
Arrow Electronics	IXTH12N150		780	60 Weeks	30	1 - 10 - 100 $10.942 1000 $9.621 10000 $9.621	Buy Now
Newark	IXTH12N150	Bulk			300	1 - 10 - 100 - 1000 $10.11 10000 $10.11	Buy Now
IXYS Corporation IXTH12N150 MOSFETs >1200V High Voltage Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH12N150					1 $17.67 10 $17.67 100 $12.89 1000 $10.94 10000 $10.94	Get Quote
Quest Components	IXTH12N150		576			1 $33.944 10 $33.944 100 $33.944 1000 $25.458 10000 $25.458	Buy Now
TTI	IXTH12N150	Tube			300	1 - 10 - 100 - 1000 $9.62 10000 $9.62	Buy Now
TME	IXTH12N150				1	1 $17.65 10 $13.95 100 $12.62 1000 $12.62 10000 $12.62	Get Quote
Vyrian	IXTH12N150		90			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXTH12N150 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
IXTH12N150		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 12A T0-247		Original	PDF		4

IXTH12N150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12N150 Abstract: IXTH12N150 IXTT12N150 Contextual Info: IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT12N150 IXTH12N150 O-268 O-247 12N150 12N150 IXTH12N150	PDF
Contextual Info: High Voltage Power MOSFETs VDSS ID25 IXTT12N150 IXTH12N150 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT12N150 IXTH12N150 O-268 12N150	PDF
Contextual Info: Advance Technical Information IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT12N150 IXTH12N150 O-268 O-247 12N150	PDF
IXTT12N150 Contextual Info: IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT12N150 IXTH12N150 O-268 O-247 12N150	PDF