IXTL2X18010T Search Results
IXTL2X18010T Datasheets Context Search
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Contextual Info: Preliminary Technical Information IXTL2x18010T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions |
Original |
IXTL2x18010T 2x100A 338B2 |