IXTM19N50 Search Results

IXTM19N50 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
IXTM19N50		IXYS	MegaMOS Power MOSFETs		Scan	PDF	716.65KB	8
IXTM19N50		IXYS	19 Amp, 450-500V, 0.3 Ohm Power MOSFET		Scan	PDF	572.3KB	7

IXTM19N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXTM19N50 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)19 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)	Original	IXTM19N50	PDF
19n50 Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100 Contextual Info: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)	OCR Scan	IXTH19N45 IXTH19N50 IXTM19N45 IXTM19N50 000035b 19n50 megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 LHi 978 megamos 13 H100	PDF
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: IXTM19N50 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)19 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)

Original

IXTM19N50

PDF

19n50

Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
Contextual Info: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)

OCR Scan

IXTH19N45 IXTH19N50 IXTM19N45 IXTM19N50 000035b 19n50 megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 LHi 978 megamos 13 H100

PDF

megamos

Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4

OCR Scan

O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95

PDF