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    IXTM4N100 Search Results

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    IXTM4N100 Price and Stock

    IXYS Corporation IXTM4N100

    TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,4A I(D),TO-204AC
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    IXTM4N100 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTM4N100 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N100 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N100 Unknown FET Data Book Scan PDF
    IXTM4N100 Sharp 1000 V, 4 A, sourse-drain diode Scan PDF
    IXTM4N100A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N100A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N100A Unknown FET Data Book Scan PDF

    IXTM4N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original
    PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007

    4N95

    Abstract: 4n100 mosfet IXTM4N100 IXTM4N95 IXTP4N100 IXTP4N95 TSLA 4N95A
    Text: I X Y S CÔRP 1ÖE D • MböbSSb OQOGbOH Ö IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 □ I X Y S 4 AMPS, 950-1000 V, 3.3Q/4.0Q ' T - 3 . ci - l 3 MAXIMUM RATINGS Parameter Sym. IXTP4N95 IXTM4N95 IXTP4N100 IXTM4N100 Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1)


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    PDF IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 O-220 00A//JS 4N95 4n100 mosfet IXTM4N95 TSLA 4N95A

    4N95

    Abstract: 4n100 mosfet IXTP4N100 ixtm4N100 ixtm4n95
    Text: I X Y S CÔRP □ I X Y läE D • 4bôba2b OQOGbOH Ö IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 S 4 AMPS, 950-1000 V, 3.3Q/4.0Q MAXIMUM RATINGS Sym. Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


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    PDF IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 EL420 O-204 4N95 4n100 mosfet ixtm4n95

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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    PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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    PDF

    IXTM6N90A

    Abstract: No abstract text available
    Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000


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    PDF IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A