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IXTT1N450HV Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTT1N450HV		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 1A TO268	Original	PDF		5

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IXYS Corporation IXTT1N450HV MOSFET N-CH 4500V 1A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT1N450HV	Tube			1	1 $58.26 10 $58.26 100 $39.96 1000 $39.60 10000 $39.60	Buy Now
Mouser Electronics	IXTT1N450HV		5			1 $63.16 10 $54.87 100 $54.87 1000 $45.25 10000 $45.25	Buy Now
Future Electronics	IXTT1N450HV	Tube			300	1 - 10 - 100 $53.35 1000 $52.80 10000 $52.80	Buy Now
TTI	IXTT1N450HV	Tube			300	1 - 10 - 100 - 1000 $39.35 10000 $39.35	Buy Now
TME	IXTT1N450HV				1	1 $46.54 10 $41.89 100 $41.89 1000 $41.89 10000 $41.89	Get Quote
Littelfuse Inc IXTT1N450HV DiscMosfet NCh Std-VeryHiVolt TO-268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXTT1N450HV	Bulk		8 Weeks	30	1 - 10 - 100 $50.60 1000 $49.00 10000 $49.00	Get Quote
Onlinecomponents.com	IXTT1N450HV					1 - 10 - 100 $99.16 1000 $35.27 10000 $35.27	Buy Now
Littelfuse Inc IXTT1N450HV-TRL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	IXTT1N450HV-TRL					1 - 10 - 100 $102.47 1000 $34.91 10000 $34.91	Buy Now

IXTT1N450HV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   85 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous	Original	IXTT1N450HV O-268HV 100ms 1N450 2-13-A	PDF
Contextual Info: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   80 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous	Original	IXTT1N450HV O-268HV 100ms 1N450 H7-P640	PDF
Contextual Info: IXTT1N450HV IXTH1N450HV High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode = 4500V = 1A   80 TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M	Original	IXTT1N450HV IXTH1N450HV O-268HV 100ms 1N450 H7-P640	PDF
DS100500 Contextual Info: Advance Technical Information IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A Ω ≤ 85Ω N-Channel Enhancement Mode TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTT1N450HV O-268 100ms 100ms 1N450 DS100500	PDF