IXXH50N60C3D1 Search Results
IXXH50N60C3D1 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXXH50N60C3D1 |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 600W TO247AD | Original | 7 |
IXXH50N60C3D1 Price and Stock
IXYS Corporation IXXH50N60C3D1IGBT PT 600V 100A TO-247AD |
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Littelfuse Inc IXXH50N60C3D1Transistor, Igbt, 600V, 100A, To-247Ad; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:1.95V; Power Dissipation:600W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Littelfuse IXXH50N60C3D1 |
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IXXH50N60C3D1 | 27 |
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IXXH50N60C3D1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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50n60c3
Abstract: 50n60c IXXH50N60C3D ixxh50n60c3d1 12v to 230v inverters circuit 12v to 230v inverters circuits 12v to 230v SMPS inverters circuits 3842IC IXXH50N60C3 IF110
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IXXH50N60C3D1 IC110 O-247 IF110 50N60C3 50n60c IXXH50N60C3D ixxh50n60c3d1 12v to 230v inverters circuit 12v to 230v inverters circuits 12v to 230v SMPS inverters circuits 3842IC IXXH50N60C3 IF110 | |
Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ |
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IC110 IXXH50N60C3D1 O-247 IF110 50N60C3 | |
50N60C3Contextual Info: Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C |
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IXXH50N60C3D1 IC110 O-247 IF110 50N60C3 |