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    IXXH75N60C3 Search Results

    IXXH75N60C3 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXXH75N60C3D1
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 150A 750W TO247 Original PDF 186.79KB
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    IXXH75N60C3 Price and Stock

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    IXYS Corporation IXXH75N60C3

    IGBT PT 600V 150A TO-247AD
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    TME IXXH75N60C3 1
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    IXYS Corporation IXXH75N60C3D1

    IGBT PT 600V 150A TO-247AD
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    Littelfuse Inc IXXH75N60C3

    Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXXH75N60C3
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    Littelfuse Inc IXXH75N60C3D1

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    IXXH75N60C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    375A1

    Abstract: IXXH75N60C3
    Contextual Info: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60C3 IC110 O-247 062in. 75N60C3 375A1 IXXH75N60C3 PDF

    Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH75N60C3D1 O-247 IF110 75N60C3 PDF

    Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH75N60C3 O-247 Non60 75N60C3 PDF

    150-A54

    Contextual Info: IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54 PDF

    150-A54

    Contextual Info: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54 PDF

    IXXH75N60C3D1

    Abstract: 75N60C3
    Contextual Info: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 IXXH75N60C3D1 PDF

    75n60

    Contextual Info: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60C3 IC110 O-247 062in. 75N60C3 75n60 PDF