JUNE1997 Search Results

fss130

Contextual Info: ¡BMí*« ? FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June1997 Features Package • 11 A, 100V, rDS ON = 0.210Í2 TO-257AA Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) Single Event Safe Operating Area Curve for Single Event Effects

r6k diode

Abstract: FDC6303N
Contextual Info: June1997 F/MRCHII-D ADVANCE INFORMATION Ml CONDUCTOR t o FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very

Contextual Info: F A I R C H June1997 I L D SEM ICONDUCTO R PRELIMINARY tm FDV303N Digital FET, N-Channel General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

D2259

Contextual Info: ISSI 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM ADVANCE INFORMATION JUNE1997 FEATURES DESCRIPTION • Fast access time: The IS S IIS61SP12836 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

Contextual Info: FSL110D, FSL110R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june1997 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O S F E T s specifically designed for commercial and military space

S8936

Abstract: DS8936
Contextual Info: FA IR C H ILD SEM ICONDUCTO R June1997 tm NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

PQ208

Abstract: XC4000E XC4000EX XC4000XL XC9500
Contextual Info: Migrating Cadence Designs to M1.3  June1997 Version M1.3 Updated excerpt from Xilinx Software Conversion Guide from XACTstep v5.X to XACTstep vM1.X. June 1997 vM1.3 Application Note excerpt Summary This guide will help you convert your existing Cadence Concept designs from previous versions of XACTstep 5.X to

Contextual Info: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS0S7C - APRIL 1998 - REVISED JUNE 199? Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256 Words x 16 Bits Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports Data-Transfer Function From the DRAM to

Oscillator XR2209

Abstract: 2209cp xr2209cp XR-2209CP SQUARE WAVE TO triangle wave schematic diagram EXAR XR2209 2209 XR2209 XR-2209 XR-2209CN
Contextual Info: XR-2209 .the analog plus Voltage-Controlled Oscillator company TM June 1997–3 FEATURES APPLICATIONS D Excellent Temperature Stability 20ppm/°C D Voltage and Current-to-Frequency Conversion D Linear Frequency Sweep D Stable Phase-Locked Loop D Wide Sweep Range (1000:1 Minimum)

Contextual Info: KM616V1002A/AL, KM616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: Preliminary CMOS SRAM KM681001B/BL, KM681001BI/BLI Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev .N o. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

M27C256B datecode

Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Contextual Info: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

intel g41 motherboard circuit block diagram downs

Abstract: AC flight deck socket box intel g41 circuit pcb diagram schematic diagram of TV memory writer 242692 82450 intel g45 MOTHERBOARD pcb CIRCUIT diagram schematic intel g41 intel g45 circuit diagram 82453GX
Contextual Info: E n n n n n n PENTIUM PRO PROCESSOR AT 150 MHz, 166 MHz, 180 MHz and 200 MHz Available at 150 MHz, 166 MHz, 180 MHz and 200MHz core speeds n Binary compatible with applications running on previous members of the Intel microprocessor family n Optimized for 32-bit applications