samsung dimm DDR3 SPD
Abstract: M378B2873EH1-CF7 samsung ddr3 Samsung ddr3 1600 SDRAM hcf7 K4B1G0846E DDR3 DIMM SPD JEDEC DDR3 SPD sensor ddr3 spd samsung
Text: SERIAL PRESENCE DETECT M378B2873EH1-CF7/CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & single sided component
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M378B2873EH1-CF7/CF8/CH9/CK0
K4B1G0846E-HCF7/CF8/CH9/CK0
8K/64ms
samsung dimm DDR3 SPD
M378B2873EH1-CF7
samsung ddr3
Samsung ddr3 1600 SDRAM
hcf7
K4B1G0846E
DDR3 DIMM SPD JEDEC
DDR3 SPD sensor
ddr3 spd samsung
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DDR3 x16 rank pcb layout
Abstract: DDR3 pcb layout guide K4B1G1646E-HCF8 K4B1G0846E-HCF8
Text: Rev. 1.51, Nov. 2010 K4B1G0446E K4B1G0846E K4B1G1646E 1Gb E-die DDR3 SDRAM 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B1G0446E
K4B1G0846E
K4B1G1646E
60FBGA
84FBGA
DDR3 x16 rank pcb layout
DDR3 pcb layout guide
K4B1G1646E-HCF8
K4B1G0846E-HCF8
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M471B2873EH1-CF7
Abstract: Samsung ddr3 1600 SDRAM samsung ddr3 ddr3 spd samsung
Text: SERIAL PRESENCE DETECT M471B2873EH1-CF7/CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 1 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component
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M471B2873EH1-CF7/CF8/CH9/CK0
K4B1G0846E-HCF7/CF8/CH9/CK0
8K/64ms
116Byte,
256Byte,
176Byte
M471B2873EH1-CF7
Samsung ddr3 1600 SDRAM
samsung ddr3
ddr3 spd samsung
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SSTE32882
Abstract: samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12
Text: SERIAL PRESENCE DETECT M393B5673EH1-CF704/CF804/CH904/CK004 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component
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M393B5673EH1-CF704/CF804/CH904/CK004
K4B1G0846E-HCF7/HCF8/HCH9/HCK0
8K/64ms
CF704
SSTE32882
samsung dimm DDR3 SPD
HCH9
CF804
LVDDR3
K4B1G0846E
samsung ddr3
RC10
RC11
RC12
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samsung dimm DDR3 SPD
Abstract: SSTE32882 inphi samsung ddr3 RC10 RC11 RC12 HCH9 ddr3 spd samsung inphi* rcd
Text: SERIAL PRESENCE DETECT M393B5673EH1-CF701/CF801/CH901/CK001 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component
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M393B5673EH1-CF701/CF801/CH901/CK001
K4B1G0846E-HCF7/HCF8/HCH9/HCK0
8K/64ms
GS04-B2
CF701
VDD36
samsung dimm DDR3 SPD
SSTE32882
inphi
samsung ddr3
RC10
RC11
RC12
HCH9
ddr3 spd samsung
inphi* rcd
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ddr3 spd samsung
Abstract: M471B5673 M471B5673EH1-CF7 DDR3 SODIMM SPD JEDEC DDR3 SPD Revision 1.1 samsung ddr3 01H00H ddr3 samsung raw card DDR3 samsung DDR3 spd
Text: SERIAL PRESENCE DETECT M471B5673EH1-CF7/CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component
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M471B5673EH1-CF7/CF8/CH9/CK0
K4B1G0846E-HCF7/CF8/CH9/CK0
8K/64ms
116Byte,
256Byte,
176Byte
ddr3 spd samsung
M471B5673
M471B5673EH1-CF7
DDR3 SODIMM SPD JEDEC
DDR3 SPD Revision 1.1
samsung ddr3
01H00H
ddr3 samsung
raw card DDR3
samsung DDR3 spd
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K4B1G1646E-HCH9
Abstract: K4B1G1646E-HCF8 k4b1g1646e K4B1G0846E K4B1G0846E-HCF8 K4B1G1646E-HCK0 DDR3 DRAM layout DDR3 pcb layout DDR3 x16 rank pcb layout K4B1G0446E
Text: Rev. 1.4, Nov. 2009 K4B1G0446E K4B1G0846E K4B1G1646E 1Gb E-die DDR3 SDRAM 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4B1G0446E
K4B1G0846E
K4B1G1646E
60FBGA
84FBGA
K4B1G1646E-HCH9
K4B1G1646E-HCF8
k4b1g1646e
K4B1G0846E
K4B1G0846E-HCF8
K4B1G1646E-HCK0
DDR3 DRAM layout
DDR3 pcb layout
DDR3 x16 rank pcb layout
K4B1G0446E
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M393B5170EH1-CF8
Abstract: M393B2873EH1 M393B5170EH1 M393B5670EH1
Text: DDR3 SDRAM Registered DIMM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb E-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
72-bit
78FBGA
medic25
M393B5170EH1-CF8
M393B2873EH1
M393B5170EH1
M393B5670EH1
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M378B2873EH1-CF8
Abstract: m391b2873eh1-cf8 M378B
Text: DDR3 SDRAM Unbuffered DIMM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 1Gb E-die 64/72-bit Non-ECC/ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
64/72-bit
78FBGA
128Mbx8
256Mx64/x72
M378/91B5673EH1
K4B1G0846E-HC
M378B2873EH1-CF8
m391b2873eh1-cf8
M378B
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PC3-10600R-09-10-E1-P1
Abstract: PC3-10600R-09-10-E1-D2 M393B5170EH1-CH9 10600R M393B5170EH1 samsung DDR3 SDRAM 2GB raw card DDR3 PC3 10600R PC3-10600R-09-10-E1 DDR3 VLP Unbuffered DIMM
Text: May. 2010 DDR3 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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Untitled
Abstract: No abstract text available
Text: SG5127RD312893UUD February 21, 2009 Ordering Information Part Numbers Description Device Vendor SG5127RD312893HBD 512Mx72 4GB , DDR3, 240-pin Registered DIMM, Parity, ECC, 128Mx8 Based, PC3-10600, DDR3-1333-999, 30.00mm, Green Module (RoHS Compliant). Hynix, Rev. B
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SG5127RD312893UUD
SG5127RD312893HBD
512Mx72
240-pin
128Mx8
PC3-10600,
DDR3-1333-999,
H5TQ1G83BFR-H9C
SG5127RD312893SDD
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47B2863A-F8SE-I REV: 1.0 General Information 1GB 128Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B2863A is a 128Mx64 DDR3 SDRAM high density SODIMM. This single rank memory module consists of eight CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with
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VL47B2863A-F8SE-I
128Mx64
204-PIN
VL47B2863A
128Mx8
204-pin
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47B5663A-F8SE-I REV: 1.0 General Information 2GB 256Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5663A is a 256Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with
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VL47B5663A-F8SE-I
256Mx64
204-PIN
VL47B5663A
128Mx8
204-pin
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M391B5673EH1-CF8
Abstract: k4b1g1646 M378B2873EH1-CF8 K4B1G0846E m391b M391B2873EH1 m391b5673 M378B5673EH1-CF8 M378B2873EH1-C m391b2873eh1-cf8
Text: DDR3 SDRAM Unbuffered DIMM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 1Gb E-die 64/72-bit Non-ECC/ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
64/72-bit
78FBGA
128Mbx8
256Mx64/x72
K4B1G0846E-HC
M391B5673EH1-CF8
k4b1g1646
M378B2873EH1-CF8
K4B1G0846E
m391b
M391B2873EH1
m391b5673
M378B5673EH1-CF8
M378B2873EH1-C
m391b2873eh1-cf8
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M471B5673EH1-CF8
Abstract: M471B2873EH1-CF8 M471B2874EH1-CF8 M471B2873EH1 K4B1G1646E M471B5673 DDR3-1066 DDR3-1333 SSTL-15 M471B5673EH1
Text: Unbuffered SoDIMM DDR3 SDRAM DDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 1Gb E-die 64-bit Non-ECC 78/96 FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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204pin
64-bit
K4B1G0846E
128Mbx8
256MX64
M471B5673EH1-CF8
M471B2873EH1-CF8
M471B2874EH1-CF8
M471B2873EH1
K4B1G1646E
M471B5673
DDR3-1066
DDR3-1333
SSTL-15
M471B5673EH1
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL51B2863F-K9S/F8S/F7S REV: 1.1 General Information 1GB 128Mx72 DDR3 SDRAM ULP ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B2863F is a 128Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module is single rank, consists
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VL51B2863F-K9S/F8S/F7S
128Mx72
244-PIN
VL51B2863F
128Mx8
244-pin
244-pin,
VN-031209
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL51B5263A-K9S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5263A is a 512Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin MLF
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VL51B5263A-K9S
512Mx72
244-PIN
VL51B5263A
256Mx8
244-pin
244-pin,
PC3-10600
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K4B1G1646E-HCH9
Abstract: K4B1G1646E-HCF8 K4B1G1646E-HCK0 K4B1G0846E-HCF7 k4b1g1646e K4B1G0846E-HCF8 samsung ddr3 K4B1G0446E-HCF7 DDR3 DIMM 240 pinout K4B1G0846E
Text: 1Gb DDR3 SDRAM K4B1G04 08/16 46E 1Gb E-die DDR3 SDRAM Specification 78 / 96 FBGA with Lead-Free & Halogen-Free (RoHS Compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4B1G04
K4B1G1646E-HCH9
K4B1G1646E-HCF8
K4B1G1646E-HCK0
K4B1G0846E-HCF7
k4b1g1646e
K4B1G0846E-HCF8
samsung ddr3
K4B1G0446E-HCF7
DDR3 DIMM 240 pinout
K4B1G0846E
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DDR3 DIMM 240 pinout
Abstract: K4B1G0846B Design Guide for DDR3-1066 M393B5170EH1-CF8 DDR3 DIMM K4B1G0846B-HC M393B5170EH1 ddr3 RDIMM pinout DDR3 RDIMM samsung m393
Text: DDR3 SDRAM Registered DIMM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb E-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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240pin
72-bit
78FBGA
DDR3 DIMM 240 pinout
K4B1G0846B
Design Guide for DDR3-1066
M393B5170EH1-CF8
DDR3 DIMM
K4B1G0846B-HC
M393B5170EH1
ddr3 RDIMM pinout
DDR3 RDIMM samsung
m393
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DQ56
Abstract: K4B1G0846E A6211 DDR3-1333 PC3-10600 DDR3 miniDIMM JEDEC NC177
Text: Product Specifications PART NO.: VL51B5263A-K9S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5263A is a 512Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin MLF
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VL51B5263A-K9S
512Mx72
244-PIN
VL51B5263A
256Mx8
244-pin
244-pin,
PC3-10600
DQ56
K4B1G0846E
A6211
DDR3-1333
PC3-10600
DDR3 miniDIMM JEDEC
NC177
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL47B2863A-F8SE REV: 1.0 General Information 1GB 128Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B2863A is a 128Mx64 DDR3 SDRAM high density SODIMM. This single rank memory module consists of eight CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with
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VL47B2863A-F8SE
128Mx64
204-PIN
VL47B2863A
128Mx8
204-pin
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K4B1G0846E-HCH9
Abstract: DDR3 miniDIMM JEDEC DDR3 timing diagram DDR3-1066 DDR3-1333 PC3-10600 samsung ddr3 minidimm JEDEC A6211
Text: Product Specifications PART NO.: VL51B2863F-K9S/F8S/F7S REV: 1.1 General Information 1GB 128Mx72 DDR3 SDRAM ULP ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B2863F is a 128Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module is single rank, consists
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VL51B2863F-K9S/F8S/F7S
128Mx72
244-PIN
VL51B2863F
128Mx8
244-pin
244-pin,
VN-031209
K4B1G0846E-HCH9
DDR3 miniDIMM JEDEC
DDR3 timing diagram
DDR3-1066
DDR3-1333
PC3-10600
samsung ddr3
minidimm JEDEC
A6211
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ULCE0505A015FR
Abstract: HR911130C RTL8211E ULCE0505A015 HR911130 1c34 HY911130C axp209 BGA441-A20 1N5819 SOD-123
Text: 5 4 3 2 D 4 SDQ[31:0] SDQ[31:0] C 4 4 4 4 4 B 4 SA[14:0] 4 SDQS[3:0] SDQM[3:0] SVREF SVREF SDQS[3:0] SDQM[3:0] 1,4 SDQS0# 1,4 SDQS1# 1,4 SDQS2# 1,4 SDQS3# SDQS0 SDQS0# SDQS1 SDQS1# SDQS2 SDQS2# SDQS3 SDQS3# SDQM0 SDQM1 SDQM2 SDQM3 SCK#A SCKA SCK#A SCKA SA[14:0]
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SDQ14
SDQ11
SDQ12
R0402
SDQ15
SDQ10
SDQ13
SDQ31
SDQ24
SDQ26
ULCE0505A015FR
HR911130C
RTL8211E
ULCE0505A015
HR911130
1c34
HY911130C
axp209
BGA441-A20
1N5819 SOD-123
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