K4E660412E Search Results

K4E640412E

Abstract: K4E660412E
Contextual Info: Industrial Temperature K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden

K4E640412E

Abstract: K4E660412E K4E640412E-TC
Contextual Info: K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden

Contextual Info: DRAM MODULE M372F160 8 0EJ(T)0-C M372F160(8)0EJ(T)0-C EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung M372F160(8)0EJ(T)0-C is a 16Mx72bits Dynamic RAM high density memory module. The Samsung

A 1458

Abstract: ma 1458 IC UA 1458 K4E640412E
Contextual Info: DRAM MODULE M372F320 8 0ET1-C M372F320(8)0ET1-C EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F320(8)0ET1-C is a 32Mx72bits Dynamic RAM high density memory module. The Samsung M372F320(8)0ET1-C consists of thirty-six CMOS 16Mx4bits