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    Samsung Semiconductor K4S561633F-XN75000

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    Bristol Electronics K4S561633F-XN75000 4
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    Samsung Semiconductor K4S561633FXN75

    IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC
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    Quest Components K4S561633FXN75 7
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    K4S561633F Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S561633F Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-C Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-E Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-F1H Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-F1L Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-F75 Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-G Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-L Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-N Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-X Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF
    K4S561633F-XE Samsung Electronics 4M x 16-Bit x 4 Banks Mobile SDRAM in 54BOC Original PDF

    K4S561633F Datasheets Context Search

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    K4S561633F

    Abstract: K4S561633F-X
    Text: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


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    PDF K4S561633F 16Bit 54BOC K4S561633F-X

    Untitled

    Abstract: No abstract text available
    Text: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original
    PDF K4S561633F 16Bit 54BOC

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original
    PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original
    PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B