KDR552E
Abstract: MARKING S1
Text: SEMICONDUCTOR KDR552E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking S1 No. 2005. 5. 27 Item Marking Description Device Mark S1 KDR552E Revision No : 0 1/1
|
Original
|
PDF
|
KDR552E
KDR552E
MARKING S1
|
KDR552E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR552E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE Low reverse current, Low capacitance. Small Package : ESC. E C 1 A FEATURES B CATHODE MARK FOR HIGH SPEED SWITCHING. 2 D F MAXIMUM RATING Ta=25 CHARACTERISTIC SYMBOL RATING UNIT VRRM 25 V
|
Original
|
PDF
|
KDR552E
KDR552E
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR552E TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE ・Low reverse current, Low capacitance. ・Small Package : ESC. E C 1 A FEATURES B CATHODE MARK FOR HIGH SPEED SWITCHING. 2 D F MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT VRRM
|
Original
|
PDF
|
KDR552E
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDR552E TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE FOR HIGH SPEED SWITCHING. FEA T U RE S • Low reverse current, Low capacitance. • Small Package : ESC. M A X IM U M RA TING Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Vrrm 25
|
OCR Scan
|
PDF
|
KDR552E
|