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    KM23V8100D Search Results

    KM23V8100D Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23V8100D Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23V8100DET Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23V8100DET Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Scan PDF
    KM23V8100DG Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23V8100DT Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23V8100DT Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Scan PDF

    KM23V8100D Datasheets Context Search

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    KM23V8100D

    Abstract: KM23V8100DET KM23V8100DT
    Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V


    Original
    PDF KM23V8100D /512Kx16) 100ns 120ns 44-TSOP2-400 KM23V8100DET KM23V8100DT

    KM23V8100D

    Abstract: KM23V8100DG
    Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original
    PDF KM23V8100D /512Kx16) 100ns 120ns KM23V8100D 42-DIP-600 KM23V8100DG 44-SOP-600 KM23V8100DG

    Untitled

    Abstract: No abstract text available
    Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V


    Original
    PDF KM23V8100D /512Kx16) 100ns 120ns 44-TSOP2-400 44-TSOP2-400)

    KM23V8100D

    Abstract: KM23V8100DET KM23V8100DT
    Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V


    Original
    PDF KM23V8100D /512Kx16) 100ns 120ns 44-TSOP2-400 KM23V8100DET KM23V8100DT

    KM23V8100D

    Abstract: KM23V8100DG
    Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original
    PDF KM23V8100D /512Kx16) 100ns 120ns KM23V8100D 42-DIP-600 KM23V8100DG 44-SOP-600 KM23V8100DG

    42-DIP-6Q0

    Abstract: No abstract text available
    Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


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    PDF KM23V8100D /512Kx16) 120ns KM23V8100D 42-DIP-6Q0 KM23V8100DG 44-SOP-BOO KM23V81OODG D8-D15C2)

    A18T

    Abstract: 23V8100DG
    Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


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    PDF KM23V8100D 512Kx16) 100ns 120ns KM23V8100D 42-DIP-600 23V8100DG 44-SQ P-600 23V8100D A18T 23V8100DG

    tl 0741

    Abstract: 3.3v 1Mx8 static ram high speed
    Text: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES G ENER AL DESCRIPTIO N • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)


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    PDF KM23V81 512Kx16) 100ns 120ns 23V8100D 44-TSQ P2-400 44-TSOP2-400) tl 0741 3.3v 1Mx8 static ram high speed

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM23V81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 8 1 0 0 D (E )T is a fu lly static m ask p ro gra m m a ble S w itch a b le organ izatio n 1,048,576 x 8 (b yte m ode) 5 24,288 x 1 6(w ord m ode)


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    PDF KM23V81 /512Kx16) 100ns 120ns 30/25m

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)


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    PDF KM23V81 /512Kx16) 100ns 120ns 23V8100D 44-TSQP2-400

    Untitled

    Abstract: No abstract text available
    Text: KM23V8100P E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEA TU R ES G EN ERA L DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 100ns(Max.) 3.0V operation: 120ns(Max.)


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    PDF KM23V8100P /512Kx16) 100ns 120ns KM23V81 44-TSQP2-400 KM23V8100D

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23V81 OOD G 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)


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    PDF KM23V81 /512Kx16) 100ns 120ns KM23V8100D 42-DIP-600 23V8100DG 44-SQ P-600 23V8100DG

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


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    PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


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    PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12