KM416C1204A Search Results

Contextual Info: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8

la 1004a

Contextual Info: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS ORAM 1 M x 1 6B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

KM416C1204AJ

Abstract: km416c1204a 1076 GE
Contextual Info: CMOS DRAM KM416C1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1204A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance

31DQ11

Contextual Info: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

Contextual Info: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

KM416V1204A

Abstract: C1004A KM416V1004A km416c1204a
Contextual Info: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

UA529

Contextual Info: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 1 ,0 4 8 ,5 7 6 x 1 6 bit D x te n d e d D a ta O u t C M O S D R A M s. D x te n d e d D a ta O u t m o d e o ffe rs

Contextual Info: KMM364Ë224AJ DRAM MODULE KMM364E224AJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 1 6 ,1 K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364F224AJ is a 2M bit X 64 Dynamic RAM high density memory module. The Samsung KMM364E224AJ consists of eight CMOS

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

Contextual Info: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance

Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23

km416c1204aj

Contextual Info: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM48V2104B

Abstract: KM48C2104B
Contextual Info: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

km416c1204a

Abstract: km416c1204aj
Contextual Info: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification - KMM5321204AW {1024 cycles/16 ms Ref, SOJ, Solder

Contextual Info: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS

km416c1204aj

Abstract: 9-14110 KMM5362205AWG
Contextual Info: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

Contextual Info: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance

KMM5322204AW

Contextual Info: KMM5322204AW DR A M Modul e ELECTRONICS KM M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 Dynamic RAM high density memory module. The

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7