KM416C1204BJ Search Results

C1204B

Abstract: t2g memory
Contextual Info: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM416C1204BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENER AL DESCRIPTION FEATURES • Part Identification - KMM364E124BJ 1024 cycles/16ms, SOJ The Samsung KMM364E124BJ is a 1M bit x 64

KMM5361205BWG

Contextual Info: Preiminary DRAM MODULE KMM5361205BW/BWG KMM5361205BW/BWG Fast Page Mode with Extended Data Out 1Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENER AL DESC RIPTIO N FEATURES The Sam sung KM M 5361205BW is a 1M bit x 36 • Part Identification

Contextual Info: Preliminary KMM5322204BW/BWG DRAM MODULE KMM5322204BW/BWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204BW is a 2M bit x 32 • Part Identification D ynam ic RAM high density m em ory module. The

Contextual Info: Preliminary DRAM MODULE KMM364E224BJ KMM364E224BJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E224BJ is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364E224BJ consists of eight CMOS

Contextual Info: Preliminary KMM5362205BW/BWG DRAM MODULE KMM5362205BW/BWG Fast Page Mode with Extended Data Out 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362205BW is a 2M bit x 36 Dynamic RAM high density memory module. The

Contextual Info: Preliminary KMM5321204BW/BWG DRAM MODULE KMM5321204BW/BWG Fast Page Mode with Extened Data Out 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Sam sung K M M 5321204BW is a 1M bit x 32 • Part Identification D ynam ic RAM high density m em ory module. The

Contextual Info: Preiminary KMM5361205BW/BWG DRAM MODULE KMM5361205BW/BWG Fast Page Mode with Extended Data Out 1Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENER AL DESCRIPTIO N The Samsung KMM5361205BW is a 1M bit x 36 FEATURES • Part Identification Dynamic RAM high density memory module. The

IC 74142

Abstract: KMM364E224BJ
Contextual Info: Preliminary KMM364E224BJ DRAM MODULE KMM364E224BJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 16, 1K Refresh, 5V G EN ERA L DESCRIPTION FEATURES The Samsung KMM364E224BJ is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364E224BJ consists of eight CMOS

Contextual Info: Preliminary KMM5322204BW/BWG DRAM MODULE KMM5322204BW/BWG Fast Page Mode with Extended Data out 2M x32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM G EN ERA L DESC RIPTIO N FEATURES The Samsung KMM5322204BW is a 2M bit x 32 Dynamic RAM high density memory module. The