KM644002 Search Results

Contextual Info: PRELIMINARY Preliminary CMOS SRAM KM644002C, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: KM644002, KM644002E, KM644002I CMOS SRAM Document Title 1Mx4 Bit with OË High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

Contextual Info: KM644002A, KM644002AE, KM644002AI CMOS SRAM 1 M x 4 Bit with (JE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20ns(Max.) • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM644002A -1 5 : 150mA(Max.)

Contextual Info: PRELIMINARY KM644002A, KM644002AE, KM644002AI CMOS SRAM Document Title 1MKx4 Bit with OE High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

EMA18

Contextual Info: % P ro tfn ? V rr-T y KM644002B, KM644002BI C M O SSR A M 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 10,12,15* • (Max.) - Low Power Dissipation Standby (TTL) : 40« • (Max.) The KM644002B is a 4,194,304-bit high-speed Static Random

Contextual Info: Preliminary CMOS SRAM KM644002B, KM644002BI Document Title 1Mx4 Bit with OE High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: KM644002/L CMOSSRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500«A (Max.) Operating : KM644002-17 : 170mA (Max.)

Contextual Info: CMOS SRAM KM644002B, KM644002BI Document Title 1Mx4 Bit with OE High Speed Static RAM(5V Operating), Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st 1997 Design Target

Contextual Info: PRELIMINARY KM644002 CMOS SRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM644002J-15: 170mA (Max.)

Contextual Info: CMOS SRAM KM644002B, KM644002BI Document Title 1Mx4 Bit with OE High Speed Static RAM(5V Operating), Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st 1997 Design Target

Contextual Info: % Pro'rjn'rc:^/- KM644002B, KM644002BI CMOSSRAM 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 10,12,15* • (Max.) - Low Power Dissipation Standby (TTL) : 40* • (Max.) (CM O S): 10» »(Max.) Operating KM644002B -1 0 : 190*»(Max.)

Contextual Info: KM644002/KM644002L CMOS SRAM 1M x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 17,20,25 ns(Max.) •Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10 mA(Max.) 500|4A(max.)-L Ver Operating KM644002/L-17 : 170 mA(Max.)

Contextual Info: KM644002/KM644002L CMOS SRAM 1M x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 17,20,25 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500nA(m ax.)-L Ver Operating KM644002/L-17 : 170m A(M ax.)

Contextual Info: CMOS SRAM KM644002/L 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/j A (Max.) Operating : KM644002-17 : 170mA (Max.)

Contextual Info: PRELIMINARY CMOS SRAM KM644002B, KM644002BI Document Title 1Mx4 Bit with OE High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: KM644002A, KM644002AE, KM644002AI CMOS SRAM Document Tills 1MKx4 Bit with OE High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target.

Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> • 7 ^ b m M 5 DD177Dh 117 SPIGK PRELIMINARY KM644002 CMOS SRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15,20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

Contextual Info: Prelim inary CMOS SRAM KM644002B, KM 644002BI D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (5V Operating), Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory D raft Data R em ark R ev No.

Contextual Info: Preliminary KM644002A CMOS SRAM 1M x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS): 10 mA(Max.) Operating KM644002A-12 : 180m A(M ax.) KM644002A-15 : 170 m A (M ax)

Contextual Info: KM644002A, KM644002AE, KM644002AI CMOS SRAM Document Title 1MKx4 Bit with OE High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target.

Contextual Info: PR CMOS SRAM KM644002C, KM644002CE, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: KM644002/L CMOS SRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 17, 20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) :10m A (Max.) L-Ver : SOO^A (Max.) Operating : KM644002-17 : 170mA (Max.)

KM644002J-20

Abstract: KM644002J-17 KM644002J20
Contextual Info: KM644002/KM644002L CMOS SRAM 1M x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 17,20,25 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500nA(m ax.)-L Ver Operating KM644002/L-17 : 170 mA(Max.)

Contextual Info: PRELIMINARY Preliminary CMOS SRAM KM644002C, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.