KM68V1 Search Results

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

KM68V1002A

Contextual Info: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM68V1002A-12 : 95mA (max.)

Contextual Info: KM68V1000BLI / Ll-L CMOS SRAM 128Kx8 Bit Low Voltage & Industrial Temperature Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100ns max. • Low Power Dissipation S tandby(C M O S ): 360nW (max.)L-Version

Contextual Info: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 ,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)

Contextual Info: PRELIMINARY KM68V1002C/CL, KM68V1002CI/CLI CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. R evision H isto ry Rev.No. History Draft Data Rev. 0.0 Initial Draft Aug. 5. 1998

Contextual Info: Preliminary CMOS SRAM KM68V1000E, KM68U1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Révision History Revision No. 0.0 History Design target Draft Data Remark Septem ber 9, 1998 Prelim inary The attached datasheets are provided by SAM SU N G Electronics. SAM SU N G Electronics CO., LTD. reserves the right to change the specifications and

Z3CS

Abstract: 32TSOP
Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128K x8 bit Low Power and Low voltage CMOS static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 >m CMOS • Organization: 128KX8 • Power Supply Voltage : KM68V1000C fam ily: 3.3VK3.3V KM68U1OOOC family : 3.0V±0.3V

Contextual Info: PRELIMINARY CMOS SRAM KM68V1 OOOBL/BL-L 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3//W(Typ.) L-Version 1.5^W(Typ.) LL-Version Operating

Contextual Info: ADVANCE INFORMATION KM68V1000BL/KM68V1000BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 1 0 0 ,120ns (max.) • Low Power Dissipation Standby (CMOS): 3*<W(typ.) L-Version

Contextual Info: KM68V1002A CMOS SRAM 1 2 8 K x 8 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 m A (M ax) Operating KM68V1002A-12 : 170 mA

Contextual Info: KM68V1002C/CL, KM68V1002CI/CLI PRELIMINARY CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

KM68U1000B

Abstract: KM68V1000B KM68V1000BLG-7L
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize April 12, 1996 Final 2.0 Revise

KM68V1002C

Contextual Info: PRELIMINARY PRELIMINARY KM68V1002C/CL, KM68V1002CI/CLI CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Initial release with Preliminary.

KM68V1002A

Contextual Info: PRELIMINARY CMOS SRAM KM68V1002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2 ,1 5 ,1 7 ,2 0 ns(Max.) • Low Pow er Dissipation Standby (TTL) : 3 0 m A(M ax.) (C M O S ): 10 m A(M ax.)

KM68V1002A

Contextual Info: KM68V1002A CMOS SRAM 128KX 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM 68V1002A-12 :1 7 0 mA

Contextual Info: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly

Contextual Info: KM68V1000BLE / LE-L CMOS SRAM 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100ns max. • Low Power Dissipation S tand by(C M O S ): 360jiW (m ax.)L-Version

Contextual Info: PRELIMINARY CMOS SRAM KM68V1002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION »Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM68V1002A-12 : 170 mA (Max.)

Contextual Info: KM68V1002AJ-15T IL08 1M 128 K x 8 -BIT SRAM —TOP VIEW— A0 IN 1 32 A16 IN A1 IN 2 31 A15 IN A2 IN 3 30 A14 IN A3 IN 4 29 A13 IN CS 28 IN 5 OE INPUTS A0 - A16 CS WE : ADDRESS : CHIP SELECT : WRITE ENABLE OUTPUT OE : ENABLE OUT I/O1 6 27 I/O8 I/O2 7 26 I/O7

KM68U1000BLG8L

Abstract: 32SOP
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage KM68V1000B family: 3.3V« *0.3V KM68U1000B family: 3.0V- -0.3V

KM68U1000E

Abstract: KM68U1000ELI-L KM68U1000EL-L KM68V1000E KM68V1000ELI-L KM68V1000EL-L KM68V1000ELG-7L
Contextual Info: KM68V1000E, KM68U1000E Family CMOS SRAM Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target September 9, 1998 Preliminary 1.0 Finalize - Change I CC1 : 3 to 4mA April 13, 1998

AL15

Contextual Info: KM68V1002A/AL CMOS SRAM ELECTRONICS 1 2 8 K x 8 B i t H igh-Speed C M O S Static R A M 3 .3 V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) Q.5mA(Max.) ; L-veronly

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Initial draft Draft Data Remark July 3rd 1996 Preliminary 1.0 Finalize - Increased I s b , I dr Commercial part = 1 0 jj.A