KM741006J Search Results

K0032

Abstract: Y255 QN22
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001772A flflö ■ S M û K KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)

syncronous

Abstract: KM741006J-10 256kx4 256Kx4 SRAM
Contextual Info: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply

Contextual Info: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast C y c le Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)

Contextual Info: FÉE 8 4 1593 PRELIMINARY KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time: 12,5ns Max. • Low Power Dissipation (mln. Cycle, 100% Duty) KM741006J-12: 190mA • Single 5V ± 5% Power Supply

Contextual Info: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5 % Power Supply

Contextual Info: 256Kx4 Syncronous SRAM KM741006 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply

Contextual Info: PRELIMINARY KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access M em ory FEATURES GENERAL DESCRIPTION • Fast Cycle Time: 12,5ns Max. • Low Power Dissipation (min. Cycle, 100% Duty) KM741006J-12: 190mA • Single 5V ± 5 % Power Supply

Contextual Info: KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7