KRA355 Search Results

KRA355

Abstract: marking AE package marking ae AE MARKING
Contextual Info: SEMICONDUCTOR KRA355 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 AE 1 2 Item Marking Description Device Mark AE KRA355 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA355

Abstract: KRA354
Contextual Info: SEMICONDUCTOR KRA351~357 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B M M FEATURES ・With Built-in Bias Resistors. D J A 2 G ・Simplify Circuit Design. 3 1 ・Reduce a Quantity of Parts and Manufacturing Process.

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: SEM ICONDUCTOR KRA351-357 TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R HIGH C U R R E N T SW ITC H IN G APPLICATION. INTERFA CE CIRCU IT A ND DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design.

KRA356

Abstract: KRA353 KRA351 KRA354 KRA352 KRA355 KRA357
Contextual Info: SEMICONDUCTOR KRA351~357 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors. D A J 2 ・Simplify Circuit Design. 3 1 G ・Reduce a Quantity of Parts and Manufacturing Process.

AG marking

Abstract: KRA351
Contextual Info: SEMICONDUCTOR KRA351~357 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D A J 2 Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.