Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTA2015 TRANSISTOR PNP FEATURES SOT–323 Excellent hFE Linearity Complementary to KTC4076 APPLICATIONS General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-323
KTA2015
KTC4076
-100mA
-400mA
-100mA,
-10mA
-20mA
25Min
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KTA2015
Abstract: marking Zo
Text: KTA2015 PNP General Purpose Transistors P b Lead Pb -Free 3 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous
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KTA2015
OT-323
OT-323
-100mA,
-10mA
-100mA
-20mA
07-Apr-10
KTA2015
marking Zo
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KTA2015
Abstract: KTC4076
Text: SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Excellent hFE Linearity D A 3 1 G ・Complementary to KTA2015. J 2 : hFE 2 =25(Min.) at VCE=6V, IC=400mA. DIM A B C
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KTC4076
KTA2015.
400mA.
KTA2015
KTC4076
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323 Excellent hFE Linearity Complementary to KTA2015 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-323
KTC4076
KTA2015
100mA
400mA
100mA,
25Min
40Min
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KTA2015
Abstract: No abstract text available
Text: KTA2015 SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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KTA2015
OT-323
-100mA
-400mA
-100mA,
-10mA
-20mA
KTA2015
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM: 0.1 W (Tamb=25℃) Collector current -0.5 A ICM: Collector-base voltage
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OT-323
OT-323
KTA2015
-100mA
-400mA
-100mA,
-10mA
-20mA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2008. 8. 29 Revision No : 2 1/2
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KTA2015
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transistor ZY
Abstract: ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=100mW z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. KTA2015W Pb Lead-free APPLICATIONS z General purpose application and switching application.
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KTA2015W
100mW)
KTC4076.
OT-323
BL/SSSTF048
transistor ZY
ZY marking
zy- transistor
marking zo sot
KTC4076
marking ZY
KTA2015W
marking code ZO
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marking Z4
Abstract: transistor z4 51 KTA2015 MARK Z MARK .Z
Text: SEMICONDUCTOR KTA2015 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 Z4 1 2 Item Marking Description Device Mark Z KTA2015 hFE Grade 4 2, 4 * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTA2015
marking Z4
transistor z4 51
KTA2015
MARK Z
MARK .Z
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WY transistor
Abstract: transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Complementary to KTA2015 z Power dissipation. PC=100mW KTC4076W Pb Lead-free APPLICATIONS z General purpose and switching application.
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KTC4076W
KTA2015
100mW)
OT-323
BL/SSSTF049
WY transistor
transistor marking WY
KTA2015
KTC4076W
Y MARKING
NPN Silicon Epitaxial Planar Transistor
.wy transistor
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KTA2015
Abstract: KTC4076
Text: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Excellent hFE Linearity D A 3 1 G ・Complementary to KTC4076. J 2 : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. DIM A B
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KTA2015
KTC4076.
-400mA.
KTA2015
KTC4076
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323 Excellent hFE Linearity Complementary to KTA2015 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-323
KTC4076
KTA2015
100mA
400mA
100mA,
25Min
40Min
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Transistor hFE CLASSIFICATION Marking CE
Abstract: KTA2015 KTC4076
Text: SEMICONDUCTOR KTA2015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ᴌExcellent hFE Linearity : hFE 2 =25(Min.) at VCE=-6V, IC=-400mA. J A SYMBOL RATING UNIT Collector-Base Voltage VCBO
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KTA2015
KTC4076.
-400mA.
Transistor hFE CLASSIFICATION Marking CE
KTA2015
KTC4076
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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KTA2015
Abstract: KTC4076 35VCEO
Text: SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ᴌExcellent hFE Linearity : hFE 2 =25(Min.) at VCE=6V, IC=400mA. J A SYMBOL RATING UNIT Collector-Base Voltage VCBO 35
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KTC4076
KTA2015.
400mA.
100mA
400mA
100mA,
25Min.
40Min.
KTA2015
KTC4076
35VCEO
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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npn power transistor ic 400ma
Abstract: KTA2015 KTC4076
Text: SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • E x cellen t Ii f e L in earity : hFE 2 =25(M in.) a t V ce=6V, Ic=400mA. • Complementary to KTA2015. O 1 MAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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PDF
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KTC4076
400mA.
KTA2015.
100mA
400mA
100mA,
25Min,
40Min.
npn power transistor ic 400ma
KTA2015
KTC4076
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KTA2015
Abstract: KTC4076
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Linearity : hFE 2 =25(Min.) a t V ce =6V, Ic=400mA. • Complementary to KTA2015.
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OCR Scan
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PDF
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KTC4076
400mA.
KTA2015.
100mA
400mA
100mA,
25Min,
40Min.
KTA2015
KTC4076
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KTC4076
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC4076 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • E x cellen t I lfe L in earity : hFE 2 =25(M in.) a t V ce=6V, Ic=400mA. E B M - T * h.I T • Complementary to KTA2015.
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OCR Scan
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PDF
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400mA.
KTC4076
KTA2015.
100mA
400mA
100mA,
100mA
25Min,
40Min.
KTC4076
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KTA2015
Abstract: KTC4076
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR T E C H N IC A L D A T A KTA2015 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=-6V , Ic=-400mA. • Complementary to KTC4076.
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OCR Scan
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PDF
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KTA2015
-400mA.
KTC4076.
-100-100-lk
KTA2015
KTC4076
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA2015 e p it a x ia l p l a n a r p n p t r a n s is t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent h FE Linearity : hFE 2 =25(Min.) at V ce= -6V , Ic=-400mA. • Complementary to KTC4076. MAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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PDF
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-400mA.
KTC4076.
KTA2015
25Min.
40Min.
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KTA2015
Abstract: KTC4076
Text: SEMICONDUCTOR TECHNICAL DATA KT A2015 e p it a x ia l p l a n a r p n p t r a n s is t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I lfe Linearity : hFE 2 =25(Min.) a t V Ce = - 6 V , Ic=-400mA. • Complementary to KTC4076.
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OCR Scan
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PDF
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KTA2015
-400mA.
KTC4076.
-100-100-lk
KTA2015
KTC4076
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