KTC3265 Search Results

transistor 1g

Abstract: MARKING 1G TRANSISTOR ktc32 KTA1298
Contextual Info: KTA1298 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd * PNP EPITAXIAL SILICON TRANSISTOR Complement to KTC3265 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Package:SOT-23 Unit Collector-Base Voltage Vcbo

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage

transistor ey

Abstract: sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES KTC3265 Pb z High DC current gain: hFE:100-320 z Low saturation voltage. z Suitable for driver stage of small motor. z Complementary to KTC1298. z Small package.

KTA1298

Abstract: KTC3265 KTA1298 kec
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3265 EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : Iife—100 320. • Low Saturation Voltage : V cE sat = 0.4V (Max.) (Ic=500mA, IB=20mA).

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain: hFE=100-320 Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

KTA1298

Abstract: KTC3265 EY transistor Transistor Marking EY npn transistor Marking EY
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

KTC3265

Contextual Info: KTC3265 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 35 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 800 mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT—23 ） TRANSISTOR（ NPN 1. BASE 2. EMITTER FEATURES 1.0 3. COLLECTOR ∙ High DC current gain: hFE=100-320 2.4 1.3 0.95 0.4 0.95 1.9 2.9 ∙ Complementary to kta1298

ktc32

Abstract: sot-23 EY EY transistor
Contextual Info: KTC3265 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High DC current gain: hFE=100-320 Complementary to KTA1298 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: KTC3265 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 35 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 800 mA

Contextual Info: SEMICONDUCTOR KTC3265 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES ・High DC Current Gain : hFE=100～320. ・Low Saturation Voltage : VCE sat =0.4V(Max.) (IC=500mA, IB=20mA).

marking EY

Abstract: transistor ey KTC3265 EY marking
Contextual Info: SEMICONDUCTOR KTC3265 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking EY No. 1 Item Marking Device Mark E KTC3265 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SEMICONDUCTOR KTC3265 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES 1998. 6. 15 Revision No : 1 1/2

KTA1298

Abstract: KTC3265
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3265 EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : Iife—100 320. • Low Saturation Voltage : V cE sat = 0.4V (Max.) (Ic=500mA, IB=20mA).

KTA1298

Abstract: KTC3265
Contextual Info: SEMICONDUCTOR KTC3265 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES E B L L ᴌHigh DC Current Gain : hFE=100ᴕ320. : VCE sat =0.4V(Max.) (IC=500mA, IB=20mA). 3 G A 2 D ᴌLow Saturation Voltage

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KTA1298

Abstract: KTC3265 KTA1298 kec
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1298 EPITA XIA L PLANAR PNP TR A N SISTO R LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : 1ife =100~320. • Low Saturation Voltage : VcE sat =_0.4V(Max.) (Ic=-500mA, IB=-20mA).

KTA1298

Abstract: KTC3265
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1298 EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY PO W ER A M PLIFIER APPLICATION. POW ER SW ITCHING APPLICATION. FE A T U R E S • High DC Current Gain : hFE=100~320. • Low Saturation Voltage

Contextual Info: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES ・High DC Current Gain : hFE=100～320. ・Low Saturation Voltage : VCE sat =-0.4V(Max.) (IC=-500mA, IB=-20mA).