KTC4666 Search Results
KTC4666 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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KTC4666 | Korea Electronics | Low Noise Transistor | Original | 74.81KB | 3 | |||
KTC4666 | Korea Electronics | Low Noise Transistor | Scan | 373.32KB | 3 | |||
KTC4666 | Korea Electronics | EPITAXIAL PLANAR NPN TRANSISTOR | Scan | 327.86KB | 3 |
KTC4666 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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KTC4666Contextual Info: SEMICONDUCTOR KTC4666 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. E FEATURE ᴌHigh hFE : hFE=600ᴕ3600. ᴌNoise Figure : 0.5dB Typ. at f=100Hz. B M M D J 3 1 G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V |
Original |
KTC4666 100Hz. KTC4666 | |
Contextual Info: SEMICONDUCTOR KTC4666 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. E FEATURE High hFE : hFE=600 3600. Noise Figure : 0.5dB Typ. at f=100kHz. M D J G A 2 3 1 SYMBOL RATING UNIT B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + |
Original |
KTC4666 100kHz. | |
KTC4666Contextual Info: SEMICONDUCTOR KTC4666 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 TA 1 2 Item Marking Description Device Mark T KTC4666 hFE Grade A A, B * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method |
Original |
KTC4666 KTC4666 | |
KTC4666Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4666 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • High Iif e • hFE=600 ~ 3600. • Noise Figure : 0.5dB Typ. at f=100Hz. MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT CHARACTERISTIC Collector-Base Voltage |
OCR Scan |
KTC4666 100Hz. KTC4666 | |
KTC4666Contextual Info: _ SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KTC4666 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • High hFE : hFE=600 ~ 3600. • Noise Figure : 0.5dB Typ. at f=100Hz. 1 i Œ2 - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC |
OCR Scan |
KTC4666 100Hz. KTC4666 | |
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4666 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • High I • hFE=600 ~ 3600. • Noise Figure : 0.5dB Typ. at f=100Hz. if e MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT CHARACTERISTIC Collector-Base Voltage |
OCR Scan |
KTC4666 100Hz. | |
KTC4666Contextual Info: SEMICONDUCTOR KTC4666 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. E FEATURE ・High hFE : hFE=600~3600. ・Noise Figure : 0.5dB Typ. at f=100kHz. B M M D J 3 1 G A 2 UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage |
Original |
KTC4666 100kHz. KTC4666 | |
Contextual Info: SEMICONDUCTOR KTC4666 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE 2008. 8. 29 Revision No : 4 1/3 |
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KTC4666 | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor | |
LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
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2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j | |
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
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USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 |