L2792 Search Results

L2683-01

Abstract: LED 830nm glass lens
Contextual Info: Metal Package LED Metal Package LED Assures High Reliability FEATURES • • • • High reliability High radiant output power Wide emission angle High-speed response: 50MHz Typ. L2792 series • Subminiature package: 2mm dia.X 2.2mm L (L2959) APPLICATIONS

11915-01

Abstract: "Infrared LED" 880 nm Pulsed Forward Current
Contextual Info: Hermetically Sealed Package LED Hermetically Sealed Package LED Assures High Reliability FEATURES • • • • High reliability High radiant output pow er W ide em ission angle High-speed response: 50M H z Typ. L2792 series • S ubm iniature package:

Contextual Info: Hermetically Sealed Package LED Hermetically Sealed Package LED Assures High Reliability FEATURES • • • • High reliability High radiant output power Wide emission angle High-speed response: 50MHz Typ. L2792 series • Subminiature package: 2mm dia.X 2.2mm L (L2959)

L2376

Abstract: G0027 pulsed laser diode GaAs 905
Contextual Info: HAMAMATSU H A M HE. D CÔRP A M A T S MSSibüT G0027Ô4 S HIGH-POWER INFRARED PULSED LASER DIODE L2376 SERIES U TECHNICAL DATA The L2376 series are high-power infrared pulsed laser diodes having a GaAs/GaAIAs double hetero-structure. According to the output power, three types are provided;

Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such

TO46

Abstract: Infrared LEDs led 660 905 red infrared L4492 infrared 190
Contextual Info: LEDs, SLD Super Luminescent Diode P astori Output Powe' Peak §$nsáM¡y (Uniuss otherwise noted. Typ. 7,u-26 ' Spectraí HaKviàcffo P.tse Time &X fc*Söm A FäU Tjrn« If if Màximum ftebnos mA it-S O fln * i *5 0 mA Clrtfl&nt te .»r ) , tn>W B av&ef

Contextual Info: Precautions For Use 1. Precautions for storage To protect the terminal leads from oxidation and stain or prevent the package from absorbing moisture, always keep the lightemitting device in a desiccator temperature: 5 to 30°C, humidity: below 40%, filled with dry nitrogen . For SLDs (super

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

840 nm GaAs

Contextual Info: Selection Guide Peak Wavelength Elem ent Radiant Output Cutoff Frequency nm Material Power*1 (mW ) GaAIAs 1.5 Emission*7 (M H z) A rea (mm) 50 ¿ 0.3 Listed Type Applications No. i Page M etal Package LED (with microball lens) 830 1.4 3.6 GaAIAs — GaAIAs

Contextual Info: Selection Guide Peak Wavelength Element Radiant Output Cutoff Frequency Emission*4 nm Material Power*’ (mW) (MHz) Area (mm) 50 ¿ 0.3 Applications Type ; . No. ! Listed i ! _ Page Hermetically Sea ed Package LED G aAIAs (with microball lens) 830 G aAIAs

autofocus IC

Abstract: L435 l2402
Contextual Info: Selection Guide Peak Wavelength Element Radiant Output Cutoff Frequency nm Material Power*’ (m W ) Emission* 4 Applications (M H z) A rea (mm) 50 ¿ 0 .3 Type Listed No. Page Herm etically Sealed Package LED G aAIAs 1.5 with microball tens) 1.4 830 G aAIAs

Contextual Info: Precautions for Use Precautions for storage To protect the terminal leads from oxidation and stain or pre­ vent the package from absorbing moisture, always keep the light-emitting device in a desiccator filled with nitrogen . Precautions during transportation