Untitled
Abstract: No abstract text available
Text: LO GI C D E V I C E S INC EbE D • S S b S iO S O Q O C H T t - a ' B _ 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O, Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum
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L7C170
CY7C168/170
20/22-pin
20-pin
20/24-pin
L7C168
SISS55Z>
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ma 8630
Abstract: L7C168PC35 L7C168PC45 L7C168PC85 l7c168pc25
Text: L 7C 16 8 /1 7 0 4K x 4 Static RAM Features Description □ 4K by 4 Static RAM w ith comm on I/O , o u tp u t enable L7C170 only The L7C168 and L7C170 are high performance, low -pow er CMOS static RAMs. The storage cells are organ ized as 4096 w ords by 4 bits p er word.
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L7C168/170
L7C170
CY7C168/170
20/22-pin
L7C168
I3/03
ma 8630
L7C168PC35
L7C168PC45
L7C168PC85
l7c168pc25
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4Kx4
Abstract: No abstract text available
Text: Typical DC & AC Characteristics 1 6 K & 6 4 K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 16K and 64K static RAM products listed below: 16K Static R A M s 64K Static RA M s L7C167 L7C168 L7C170 L7C171
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116
L6116L
16Kxl
L7C187
L7C164
4Kx4
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Untitled
Abstract: No abstract text available
Text: 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O, Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 190 mW typical at 35 ns Standby: 100 p.W typical
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L7C168/170
L7C170
CY7C168/170
20/22-pin
20-pin
L7C168
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Package 48 LCC
Abstract: No abstract text available
Text: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116
L7C187
L7C164
L7C165
L7C166
Package 48 LCC
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Untitled
Abstract: No abstract text available
Text: L 7 C 16 8 / 1 7 0 4K x 4 Static RAM Features Description □ 4K by 4 Static RAM with common I/O , output enable L7C170 only The L7C168 and L7C170 are highperformance, low-power CMOS static RAMs. The storage cells are organ ized as 4096 words by 4 bits per word.
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L7C170
L7C168
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES<INC IbE 4K x 4 Static RAM D • SSbSTOS OOQ'OSTb 7 ■ _ _ L 7 C 1 6 8 /1 7 0 c * Features_ fa □ 4K by 4 Static RAM with common I/O , output enable L7C170 only The L7C168 and L7C170 are highperformance, low-power CMOS static
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L7C170
CY7C168/170
20/22-pin
20-pin
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Untitled
Abstract: No abstract text available
Text: L7C168/170 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O , Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 190 mW typical at 35 ns Standby: 100 p.W typical
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PDF
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L7C168/170
L7C170
CY7C168/170
20/22-pin
20-pin
L7C168
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STATIC RAM 8464
Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116/
L6116L
L7C183
CY7C183
L7C184
STATIC RAM 8464
IMS1433
SSM6116
IMS1630
SSM6171
SSM7188
hitachi selection guide
SSM7164
hm6264
ic 6116 ram
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Untitled
Abstract: No abstract text available
Text: L7C168/170 4K x 4 Static RAM DESCRIPTION FEATURES □ 4K x 4 Static RAM with Com m on I/O , O utput Enable L7C 170 only □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 8 ns maxim um □ Low Pow er Operation A ctive: 190 m W typical at 35 ns
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20-pin
L7C168/170
L7C170DM35
L7C170CM35
L7C170DME35
L7C170CME35
MIL-STD-883
L7C170DMB35
L7C170CMB35
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