LDN9926ET1G Search Results
LDN9926ET1G Datasheets Context Search
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Contextual Info: LESHAN RADIO COMPANY, LTD. LDN9926ET1G Dual N Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 29mΩ @VGS = 4.5V. N). RDS(ON) = 42mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(O High power and current handing capability. |
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LDN9926ET1G |