9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: EDI7F4342MC 4x2Megx32 Features 4x2Megx32 Flash Module • 4 x 2 Meg x 32 • Based on Sharp's LH28F016SU Flash Device • Fast Read Access Time - 80ns • 5- Volt-Only Reprogramming • Low Power Dissipation • 60mA per Device Active Current • 10µA per Device CMOS Standby Current

Contextual Info: ^EDI EDI7F4342MC • ELECTRONIC DESIGNS, INC. Features 4x2Megx32 4x2Megx32 Flash Module • 4 x 2 Meg x 32 The EDI7F4342MC is organized as four banks of 2 Meg x • Based on Sharp's LH28F016SU Flash Device 32. The module is based on Sharp's LH28F016SU - 2Megx8

EDI7F4342MC

Abstract: LH28F016SU a1458
Contextual Info: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES n 4x2Mx32 n Based on Sharp's LH28F016SU Flash Device n Fast Read Access Time - 80ns n 5V Only Reprogramming n Low Power Dissipation n 60mA per Device Active Current n 10µA per Device CMOS Standby Current

EDI7F4342MC

Abstract: LH28F016SU
Contextual Info: White Electronic Designs EDI7F4342MC 4x2Mx32 FLASH MODULE DESCRIPTION FEATURES „ 4x2Mx32 „ Based on Sharp's LH28F016SU Flash Device „ Fast Read Access Time - 80ns „ 5V Only Reprogramming „ The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8

LH28F016SUHT-10

Abstract: 1MX16
Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F016SUHT-10 16M 1M x 16/2M x 8

9373

Abstract: EDI7F4342MC LH28F016SU
Contextual Info: ^EDI EDI7F4342MC m ELECTRONIC DESIGNS. INC. • Features 4x2Megx32 4x2Megx32 Flash Module ■ 4 x 2 Meg x 32 ■Based on Sharp's LH28F016SU Flash Device ■Fast Read Access Time - 80ns ■5- Volt-Only Reprogramming ■Low Power Dissipation The EDI7F4342MC is organized as four banks of 2 Meg x

EDI7F4342MC

Abstract: LH28F016SU
Contextual Info: EDI7F4342MC 4x2Mx32 FLASH MODULE FEATURES DESCRIPTION n 4x2Mx32 The EDI7F4342MC is organized as four banks of 2Mx32. The module is based on Sharp's LH28F016SU - 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Sharp's LH28F016SU Flash Device

tsop tray matrix outline

Abstract: TSOP56 package tray 16T MARKING AFL MARKING T40 16 ultrasonic LH28F008SA LH28F016SUT-10 UT-10 6sr5
Contextual Info: 1 SHARP LHF16S11 LH28F016SUT-10 16 Mbit 1 Mbit x 16, 2 Mbit x 8 5V Single Voltage Flash Memory CONTENTS PAGE FEATURES. 2 CONTENTS PAGE 4.0 BUS OPERATIONS, COMMANDS 1.0 INTRO DUC TIO N. 3

LH28F032SUTD-70

Abstract: amplifier 3HH GDLB LH28F008SA LH28F016SU LH28F016SUT-70 ltls LH28F032SUTD70
Contextual Info: SHARP LH28F032SUTD-70 32 MBIT 2 MBIT x 16, 4 MBIT x 8 5V SINGLE VOLTAGE FLASH MEMORY FEATURES • Dual LH28F016SUT-70 (5V Single Voltage 16M Flash Memory) Chips Encapsulated in a Single Package • 5V Write/Erase Operation (5V Vpf>) - No Requirement for DC/DC

LH28F016SU

Contextual Info: EDI7F4344MC 4x4Megx 32 4x4Megx32 Flash Module Block Diagrams The EDI7F4344MC is organized as a 4 x 4Meg x 32 module which is based on Sharps LH28F016SU 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. A0-A20 G\ W0\ W1\ W2\ W3\

Contextual Info: SHARP LHF16S10 ! r~ LH28F016SUR-70 16 Mbit 1 Mbit x 16, 2 Mbit x 8 5V Single Voltage Flash Memory CONTENTS PAGE CONTENTS PAGE 1.0 INTRODUCTION. 3 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS. 10

56-PIN

Abstract: LH28F008SA LH28F016SU
Contextual Info: LH28F016SU FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation 3/5 1 56 WP CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.32 MB/sec Write Transfer Rate A20 4 53 RY/BY A19

Contextual Info: ^EDI EDI7F342MC 2Megx32 ELECTRONIC DESIGNS. INC 2Megx32 Flash Module The EDI7F342MC and EDI 7F2342MC are organized as one and two banks of 2Meg x 32 respectively. The Block Diagrams modules are based on Sharp's LH28F016SU-2Megx8 Flash device in TSOP packages which are mounted on

EDI7F342MC

Abstract: LH28F016SU
Contextual Info: EDI7F342MC 2Megx32 2Megx32 Flash Module The EDI7F342MC and EDI 7F2342MC are organized as one and two banks of 2Meg x 32 respectively. The modules are based on Sharp's LH28F016SU-2Megx8 Flash device in TSOP packages which are mounted on an FR4 substrate Block Diagrams

a1458

Abstract: LH28F016SU A-1854
Contextual Info: EDI7F4344MC 4x4Megx32 4x4Megx32 Flash Module Block Diagrams The EDI7F4344MC is organized as a 4 x 4Meg x 32 EDI7F4344MC-BNC 4x4Megx32 80pin SIMM module which is based on Sharps LH28F016SU 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: EDI7F4344MC 4x4Megx32 4x4Megx32 Flash Module Wt.Ul TTie E DI7F4344MC is organized as a 4 x 4Meg x 32 EDI7F4344MC-BNC module which is based on Sharps LH28F016SU - 4x4Megx3280pinSBI/IM 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate

lg washing machine circuit diagram

Abstract: LH28F016SU TSOP 54 tray
Contextual Info: SHARP LH F16S12 1 LH28F016SUR-10 16 Mbit 1 Mbit x 16, 2 Mbit x 8 5V Single Voltage Flash Memory CONTENTS PAGE FEA TU R ES. 2 CONTENTS PAGE 3 4.0 BUS OPERATIONS, COMMANDS AND STATUS REG ISTER

Contextual Info: ^EDI EDI7F342MC 2Megx32 ELECTROfMICDEÇI0 N2. ING 2Megx32 Flash Module The EDI7F342MC and EDI 7F2342MC are organized Block Diaqrams as one and two banks of 2Meg x 32 respectvely. The modules are based on Sharp’s LH28F016SU-2Megx8 Flash device In TSOP packages which are mounted on

Contextual Info: SHARP February 1997 FLASH MEMORY LH28F016SUHT-10 V e r. L O E SHARP CORPORATION Engineering Department 2 Flash Memory Development Center Tenrì Integrated Circuits 1C Group I LHF 1 6 S 1 5 # Handle this document carefully for it contains material protected by international

Contextual Info: Flash, Software, Drivers, Non-Volatile, LH28F016SA, LH28F016SU, LH28F800SU

Contextual Info: EDI7F4344MC 4x4Megx32 4x4Megx32 Flash Module Block Diagrams The EDI7F4344MC is organized as a 4 x 4Meg x 32 EDI7F4344MC-BNC 4x4Megx32 80pin SIMM module which is based on Sharps LH28F016SU 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: WDI EDI7F4342MC i ELECTRONIC CESGhe, INC Features 4x2Megx32 4x2Megx32 Flash Module 4 x 2 Meg x 32 The EDI7F4342MC is organized as four banks of 2 Meg x Based on Sharp's LH28F016SU Flash Device 32. Themodule is based on Sharp’s LH28F016SU -2Megx8 Fast Read Access Time - 80ns

LH28F016SUT-70

Abstract: LH28F008SA LH28F016SU LH28F16SUT-70
Contextual Info: LH28F016SU 16M 1M x 16/2M × 8 5 V Single Voltage Flash Memory FEATURES DESCRIPTION • 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase SHARP’s LH28F016SU 16M Flash Memory is a revolutionary architecture which enables the design of truly

56-PIN

Abstract: LH28F008SA LH28F016SA
Contextual Info: LH28F016SA FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 3/5 1 56 CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.43 MB/sec Write Transfer Rate