LH53H0900 Search Results

DIC14

Contextual Info: LH53H0900 PRELIMINARY CMOS 1M 128K x 8 Mask-Program m able ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH53H0900 is a high speed mask-programma­ ble ROM organized as 131,072 x 8 bits (1,048,576 bits). It is fabricated using silicon-gate CMOS process tech­

Contextual Info: LH53H0900 PRELIMINARY C M O S 1M 128K x 8 M ask-Program m able ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization • Access time: 45 ns (M AX.) The LH53H0900 is a high speed mask-programma­ ble ROM organized as 131,072x8 bits (1,048,576 bits). It is fabricated using silicon-gate CMOS process tech­

DIC14

Contextual Info: LH53H0900 PRELIMINARY CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES • 131,072 x 8 bit organization • Access time: 55 ns (MAX.) • Power consumption: Operating: 660 mW (MAX.) Standby: 440 mW (MAX.) DESCRIPTION The LH53H0900 is a high speed m ask-program m a­

Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH53H0900 is a high speed mask-programmable ROM organized as 131,072 x 8 bits (1,048,576 bits). It is fabricated using silicon-gate CMOS process tech­

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

48 tsop flash pinout

Abstract: LH23512
Contextual Info: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)