LNA2901L Search Results

Infrared Emitting Diode

Abstract: LNA2901L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package

Contextual Info: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode φ5.0±0.2 7.65±0.2 • Features 1.5 2-0.8 max. 2-0.6±0.15 (2.0) 25.6±1.0 5.05±0.3 (1.0) • High-power output, high-efficiency: Ie = 9 mW/sr (min.)

Contextual Info: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode M Di ain sc te on na tin nc ue e/ d φ5.0±0.2 7.65±0.2 • Features 1.5 2-0.8 max. 2-0.6±0.15 (2.0) 25.6±1.0 5.05±0.3 (1.0)

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2901L G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 9 mW /sr min. Light emitting spectrum suited for silicon photodetectors

LNA2901L

Contextual Info: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors

Contextual Info: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode φ5.0±0.2 M Di ain sc te on na tin nc ue e/ d 7.65±0.2 • Features 1.5 25.6±1.0 2-0.8 max. di p Pl lan nclu ea e se pla m d m des

LNA2901L

Contextual Info: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2901L G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 9 mW/sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package

Contextual Info: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode φ5.0±0.2 7.65±0.2 • Features 1.5 2-0.8 max. 2-0.6±0.15 (2.0) 25.6±1.0 5.05±0.3 M Di ain sc te on na tin nc ue e/ d (1.0)

LNC703PS

Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030