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LP2305DSLT1G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mosfet SOD 23 Abstract: 33039 marking P5S lp2305 Contextual Info: LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V LP2305DSLT1G RDS ON , Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance	Original	LP2305DSLT1G 236AB) 3000/Tape LP2305DSLT3G 10000/ture: 195mm 150mm 10Reel/Inner mosfet SOD 23 33039 marking P5S lp2305	PDF
Contextual Info: LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET LP2305DSLT1G S-LP2305DSLT1G VDS= -8V RDS ON , Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ 3 Features Advanced trench process technology	Original	LP2305DSLT1G S-LP2305DSLT1G 236AB) AEC-Q101 OT-23	PDF

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mosfet SOD 23

Abstract: 33039 marking P5S lp2305
Contextual Info: LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V LP2305DSLT1G RDS ON , Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance

Original

LP2305DSLT1G 236AB) 3000/Tape LP2305DSLT3G 10000/ture: 195mm 150mm 10Reel/Inner mosfet SOD 23 33039 marking P5S lp2305

PDF

Contextual Info: LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET LP2305DSLT1G S-LP2305DSLT1G VDS= -8V RDS ON , Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ 3 Features Advanced trench process technology

Original

LP2305DSLT1G S-LP2305DSLT1G 236AB) AEC-Q101 OT-23

PDF