LP801 Search Results

Contextual Info: a s u s LP801 • LP812series . /'vy^r— v SMD Top View Package FEATU R ES O P T IC A L C H A R A C T E R IS T IC S ftftDV] a *e S m a ll SM D P a c k a g e » G ift Em itted Color 120deg L P 8 0 1 V ie w in g A n g le 1 2 0 d e g 115deg ( L P 8 1 2 )

TB203

Abstract: LP801
Contextual Info: Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=0.5A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm 5 470 490 510 530 550 570 590 610 630 650 670 690 710 730 750 770 Freq in MHz Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=1A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm

TB228

Abstract: c12 ph zener diode ph c15 zener c10 ph zener zener diode c16 ph
Contextual Info: March 6, 2014 TB228 Frequency=20-1000MHz Pout=1W Gain=13dB avg. Vds=28Vdc Idq=0.8A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 6, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

LP801

Contextual Info: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

TB231

Contextual Info: March 19, 2014 TB231 Frequency=100-470MHz Pout=10W Gain=13dB avg. Vds=28Vdc Idq=0.2A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 19, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

TB227

Abstract: LP801
Contextual Info: November 21, 2013 TB227 Frequency=10-100MHz Pout=10W Gain=13dB Vds=28Vdc Idq=0.2A Efficiency=55% Typical LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com November 21, 2013 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

Contextual Info: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

LP801

Contextual Info: LP801 • LP812series . SMD Top View Package FEATU R ES O P T IC A L C H A R A C T E R IS T IC S ftftDV] a*e S m a ll SM D P a c k a g e » G ift Em itted Color 120deg L P 8 0 1 V ie w in g A n g le 1 2 0 d e g 115deg (L P 8 1 2 ) I I n d ic a t o r s mm

TB217

Abstract: PORCELAIN
Contextual Info: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W

LP801

Contextual Info: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB241

Contextual Info: Decem mber 3, 20144 T TB241 Frequenccy=1.5-1200MHz Poout=10W Gaain=16dB Vd ds=24Vdc Id dq=0.6A Efficciency=43% % LP801 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m December 3, 2014 TB241 P1dB/P3dB vs Freq: Vds = 24Vdc, Idq = 0.6A

Contextual Info: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

B-3067

Abstract: ddc b-3067 TST 9007 TST-9017 TST-9002 LP-8018 TR 25679 TST-9000 Series Twin Stacked LM 9014 c TST-9007
Contextual Info: QQQ ILC DATA DEVICE CORPORATION*_ PULSE TRANSFORMERS MIL-STD-1553 TRANSFORMERS FEATURES DESCRIPTION AND APPLICATIONS • The military data bus specification, MIL-STD-1553, has brought about the need for versatile pulse transformers that meet all the electrical

LP801

Abstract: YCL isolation LP801-12S03 LP801-24S03 LP801-48S03
Contextual Info: 25 watts /3"x2.60"×0.45" Package LP 3.3V output series Feature: l l l l l l l YCL Low Cost 2:1 input range High efficiency Industry-standard package and pinout 500Vdc Input/Output Isolation On/0ff control and Vout trim 3.3V low voltage output Specifications: At 25°C

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

DTM180AA

Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Contextual Info: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS

Contextual Info: LONG STROKE LINEAR POTENTIOMETERS FOR DISPLACEMENT MEASUREMENT Shown with DP-41-E Meter, $545 See Section D Dimensions in mm in SHAFT EXTENSION, FOR USE w/ 6.00 mm (0.24") SHAFT 1/4 - 28 NF-2A THREAD 11 mm (7/16")ACROSS FLATS TYPICAL 6.4 mm (1/4") ACROSS FLATS

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30