LP801 Search Results

LP801 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DLP801REA0FYV		Texas Instruments	0.80-inch WUXGA ProAV DLP® digital micromirror device (DMD) 350-CPGA 0 to 70
DLP801XEA0FYV		Texas Instruments	0.80-inch 4K+ ProAV DLP® digital micromirror device (DMD) 350-CPGA 0 to 70

LP801 Price and Stock

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Texas Instruments DLP801XEA0FYV IC DIG MICROMIRROR DEV 350CPGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DLP801XEA0FYV	Bulk			105	1 - 10 - 100 - 1000 $435 10000 $435	Buy Now
Mouser Electronics	DLP801XEA0FYV					1 - 10 - 100 - 1000 $435.01 10000 $435.01	Get Quote
Texas Instruments DLP801REA0FYV IC DIG MICROMIRROR DEV 350CPGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DLP801REA0FYV	Bulk			105	1 - 10 - 100 - 1000 $372.5 10000 $372.5	Buy Now
Mouser Electronics	DLP801REA0FYV					1 - 10 - 100 - 1000 $372.51 10000 $372.51	Get Quote
Samtec Inc PCIE-LP-08-01-S-DV-A-K-TR PCI Express / PCI Connectors 1.00 mm PCI Express Gen 3 Edge Card Connector Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PCIE-LP-08-01-S-DV-A-K-TR					1 - 10 - 100 - 1000 $3.94 10000 $3.94	Get Quote
Banner Engineering Corp QS18VN6LP-801192 World-Beam Qs18 Series: Polarized Retro ; Range: 3.5 M; Input: 10-30V Dc; Output: Complementary Solid State Npn; Amp Mte 254 Mm (10 In) Male Pigtail \|Banner Engineering QS18VN6LP-801192
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	QS18VN6LP-801192	Bulk			1	1 $90 10 $90 100 $90 1000 $90 10000 $90	Buy Now
RS	QS18VN6LP-801192	Bulk		5 Weeks	1	1 $106 10 $106 100 $106 1000 $106 10000 $106	Get Quote
Banner Engineering Corp QS18VP6LP-801662 Photoelectric, Polarized Retro, Range 3.5 m with BRT-40-19A, Output Comp PNP \| Banner Engineering QS18VP6LP-801662
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	QS18VP6LP-801662	Bulk		5 Weeks	1	1 $113.22 10 $113.22 100 $113.22 1000 $113.22 10000 $113.22	Get Quote

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LP801 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LP801		Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Original	PDF
LP801-12S03		YCL Electronics	DC-to-DC Power Supply Module		Original	PDF
LP801-24S03		YCL Electronics	DC-to-DC Power Supply Module		Original	PDF
LP801-48S03		YCL Electronics	DC-to-DC Power Supply Module		Original	PDF

LP801 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TB203 Abstract: LP801 Text: Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=0.5A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm 5 470 490 510 530 550 570 590 610 630 650 670 690 710 730 750 770 Freq in MHz Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=1A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm	Original	PDF	TB203 LP801 28Vdc 17dBm
TB228 Abstract: c12 ph zener diode ph c15 zener c10 ph zener zener diode c16 ph Text: March 6, 2014 TB228 Frequency=20-1000MHz Pout=1W Gain=13dB avg. Vds=28Vdc Idq=0.8A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 6, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012	Original	PDF	TB228 20-1000MHz 28Vdc LP801 CF14JT150R CF14JT3K90 ECA-1JHG470 CF14JT10K0 MCR18EZHJ222 MCR18EZPJ103 TB228 c12 ph zener diode ph c15 zener c10 ph zener zener diode c16 ph
LP801 Abstract: No abstract text available Text: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LP801 LP801
TB231 Abstract: No abstract text available Text: March 19, 2014 TB231 Frequency=100-470MHz Pout=10W Gain=13dB avg. Vds=28Vdc Idq=0.2A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 19, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012	Original	PDF	TB231 100-470MHz 28Vdc LP801 CPF0805B5R6E1 RT0805FRE07825RL IPP-RB201-300 MCR18EZPJ103 MCR18EZHJ222 281-10-RC TB231
TB227 Abstract: LP801 Text: November 21, 2013 TB227 Frequency=10-100MHz Pout=10W Gain=13dB Vds=28Vdc Idq=0.2A Efficiency=55% Typical LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com November 21, 2013 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012	Original	PDF	TB227 10-100MHz 28Vdc LP801 1111X103KW500 1111N102GW500 P5312-ND FT-37-43 -FT-37-43 FT-50-43 TB227 LP801
Untitled Abstract: No abstract text available Text: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LP801
TB217 Abstract: PORCELAIN Text: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W	Original	PDF	TB217 30-512MHz 28Vdc LP801 28Vdc, 30MHz RHM10kECT-ND PORCELAIN
LP801 Abstract: No abstract text available Text: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LP801 LP801
TB241 Abstract: No abstract text available Text: Decem mber 3, 20144 T TB241 Frequenccy=1.5-1200MHz Poout=10W Gaain=16dB Vd ds=24Vdc Id dq=0.6A Efficciency=43% % LP801 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m December 3, 2014 TB241 P1dB/P3dB vs Freq: Vds = 24Vdc, Idq = 0.6A	Original	PDF	TB241 24Vdc LP801 TB241 24Vdc, FT-37-43 22AWG
Untitled Abstract: No abstract text available Text: polyfet rf devices LP801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LP801
LP801 Abstract: YCL isolation LP801-12S03 LP801-24S03 LP801-48S03 Text: 25 watts /3"x2.60"×0.45" Package LP 3.3V output series Feature: l l l l l l l YCL Low Cost 2:1 input range High efficiency Industry-standard package and pinout 500Vdc Input/Output Isolation On/0ff control and Vout trim 3.3V low voltage output Specifications: At 25°C	Original	PDF	500Vdc 500Vdc 100KHz 1000M LP801-12S03 LP801-24S03 LP801-48S03 LP801 YCL isolation LP801-12S03 LP801-24S03 LP801-48S03
Untitled Abstract: No abstract text available Text: MTT 2001 Vdmos vs. LDMOS How to Choose Polyfet Rf Devices S. K. Leong Tuesday, May 22, 2001 1 Vdmos vs Ldmos • Technology - Process Structure Differences. • DC Characteristics • RF Characteristics – Gain, Stability, Ruggedness • Applications – HF, VHF, Low UHF, High UHF, PCS	Original	PDF
MGCF21 Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount	Original	PDF	L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
DTM180AA Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS	Original	PDF	200mW 100mW DTM180AA DT-408 STD8018A LP05018 LS1012 DTM180AB

rf push pull mosfet power amplifier Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941 Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30	Original	PDF	200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Untitled Abstract: No abstract text available Text: a s u s LP801 • LP812series . /'vy^r— v SMD Top View Package FEATU R ES O P T IC A L C H A R A C T E R IS T IC S ftftDV] a *e S m a ll SM D P a c k a g e » G ift Em itted Color 120deg L P 8 0 1 V ie w in g A n g le 1 2 0 d e g 115deg ( L P 8 1 2 )	OCR Scan	PDF	LP801 LP812series 120deg 115deg LP812
LP801 Abstract: No abstract text available Text: LP801 • LP812series . SMD Top View Package FEATU R ES O P T IC A L C H A R A C T E R IS T IC S ftftDV] a*e S m a ll SM D P a c k a g e » G ift Em itted Color 120deg L P 8 0 1 V ie w in g A n g le 1 2 0 d e g 115deg (L P 8 1 2 ) I I n d ic a t o r s mm	OCR Scan	PDF	LP801 LP812series 120deg 115deg LP801' LP801
B-3067 Abstract: ddc b-3067 TST 9007 TST-9017 TST-9002 LP-8018 TR 25679 TST-9000 Series Twin Stacked LM 9014 c TST-9007 Text: QQQ ILC DATA DEVICE CORPORATION*_ PULSE TRANSFORMERS MIL-STD-1553 TRANSFORMERS FEATURES DESCRIPTION AND APPLICATIONS • The military data bus specification, MIL-STD-1553, has brought about the need for versatile pulse transformers that meet all the electrical	OCR Scan	PDF	MIL-STD-1553 MIL-STD-1553, MIL-STD-1553A VII-332 VII-333 VII-334 B-3067 ddc b-3067 TST 9007 TST-9017 TST-9002 LP-8018 TR 25679 TST-9000 Series Twin Stacked LM 9014 c TST-9007