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OA97 Abstract: LS352 Contextual Info: LINEAR SYSTEMS LS35Q LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES hpE 200 @ 10^A -1m A Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor ONE SIDE 250mW 2.3mW/°C B1 BOTH SIDES 500mW 4.3mW/°C 60	OCR Scan	LS35Q LS351 LS352 275MHz 250mW 500mW LS350: LS352: ForLS351: OA97 LS352	PDF
Contextual Info: LINEAR SYSTEMS LS350 LS351 LS352 MONOLITHIC DUAL Linear Integrated Systems 'ËËËËËËËËËËUÈËËËËÊ TRANSISTORS FE A TU R E S HIGH GAIN hpE > 200 @ 10^A -1 mA TIGHT VBE MATCHING lVBE1-VBE2l = 0 2mV TYP 275M HzTYP. @ 1mA HIGH C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1	OCR Scan	LS350 LS351 LS352 LS35Q: LS352:	PDF

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OA97

Abstract: LS352
Contextual Info: LINEAR SYSTEMS LS35Q LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES hpE 200 @ 10^A -1m A Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor ONE SIDE 250mW 2.3mW/°C B1 BOTH SIDES 500mW 4.3mW/°C 60

OCR Scan

LS35Q LS351 LS352 275MHz 250mW 500mW LS350: LS352: ForLS351: OA97 LS352

PDF

Contextual Info: LINEAR SYSTEMS LS350 LS351 LS352 MONOLITHIC DUAL Linear Integrated Systems 'ËËËËËËËËËËUÈËËËËÊ TRANSISTORS FE A TU R E S HIGH GAIN hpE > 200 @ 10^A -1 mA TIGHT VBE MATCHING lVBE1-VBE2l = 0 2mV TYP 275M HzTYP. @ 1mA HIGH C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1

OCR Scan

LS350 LS351 LS352 LS35Q: LS352:

PDF