M28F101 Search Results

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

M28F101

Abstract: PDIP32 PLCC32
Contextual Info: SGS-THOMSON ^ 7 # M28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE

Contextual Info: r = 7 ^ 7 ^ S C S -T H O M S O N M28F101 RfflD @i Li©ÜWROD(Sl CMOS 1 Megabit (128K x 8, Chip Erase FLASH MEMORY ADVA N CE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: lOO^AMax ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

28F101

Abstract: 013d01 M28F101
Contextual Info: / = T SCS-THOMSON ^ 7 # ll ra®[l[L[iOT®R!lD i M28F101 1 Mb (128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ - 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10|iS typical

plcc32 pinout

Abstract: M28F101 PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mb 128K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max

M28F101

Abstract: PLCC32 QR104
Contextual Info: QUALIFICATION REPORT M28F101 1 Megabit 128K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F101 is a 1 Megabit FLASH Memory organised as 128K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially

30a124

Contextual Info: r= 7 S G S -T H O M S O N *7 M « liüilDIgMilLiÊTnMaDÊg M 28 F101B M28V 101B CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ABBREVIATED DATA • FAST ACCESS TIMES - 60ns for M28F101B version - 150ns for M28V101B version ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

M28F101

Abstract: PDIP32 PLCC32 TSOP32 0625E-1
Contextual Info: SGS-TtiOMSON M28F101 G fflD S Î3 (m i(g T ïïM M (g i 1 Megabit (128K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10^is

Contextual Info: 52E D 7 ^ 2 3 7 G03777Ô b ô3 ISGTH T ~ K -\i -2 £ S G S -1 H 0 M S 0 N M28F101 io S f, S - T H O M S O N CMOS 1 Megabit 128K x 8 FLASH MEMORY ADVANCE DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 10OpA Max 10,000 ERASE/PROGRAM CYCLES

M28F101

Abstract: PDIP32 PLCC32 TSOP32 SRAM 10ns
Contextual Info: M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES

Contextual Info: £yjSGS-THOMSON DWIllLI DW!lll©i M28F101 1 Mb 128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: 1Ojas typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: w - SCS-THOMSON k7#» IM [MDi[LI STnMDKOD©i> M28F101 1 Mb (128K x 8, Chip Erase FLASH MEMORY • ■ ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10^is typical ELECTRICAL CHIP ERASE in 1s RANGE

2A153

Abstract: 7W32 M28F101
Contextual Info: /=T SGS-IHOMSON 1 1 » HOIgWlilUEgT^SMlgS M28F101 *> CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 100|iA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10^s

plcc32 pinout

Abstract: M28F101 PLCC32 TSOP32 TSOP32 Package PDIP32
Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Erase Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

M28F101

Abstract: TSOP32 Package TSOP32 QR102 NOR Flash Qualification
Contextual Info: QUALIFICATION REPORT M28F101 1 Megabit CMOS/T5 FLASH MEMORY in TSOP32 INTRODUCTION The M28F101 is a 1 Megabit FLASH MEMORY organised as 128K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially developed for flash memory products. The memory features a fast 100ns access time, very low

Contextual Info: EjJ SGS-THOMSON D»ILI £TMD(gi M28F101 1 Mb (128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: lO^s typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION

M28F101

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

Contextual Info: M28F101 1 Mbit 128Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACC ESS TIME: 70ns BYTE PROGRAMING TIME: 10|is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Stand-by Current: 5|j,A typical

TSOP32 FOOTPRINT

Abstract: M28F101 M29F010B
Contextual Info: AN1251 APPLICATION NOTE Replacing the M28F256, M28F512 and M28F101 with the M29F512B and M29F010B Flash Memories CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F256,

M28F101

Contextual Info: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

CDIP32

Abstract: M28F101 PLCC32 QRFL9811
Contextual Info: QRFL9811 QUALIFICATION REPORT M28F101 T5-U35: 1 Mbit x8 Dual Supply Flash Memory INTRODUCTION The M28F101 is a 1 Mbit Dual Supply (5V/12V) Flash memory organized as 128 KByte of 8 bits each. It is offered in PLCC32 packages. The M28F101 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U35 (-35%

M28F101

Abstract: PLCC32 package PLCC32
Contextual Info: QUALIFICATION REPORT M28F101 1 Megabit CMOS/T5 FLASH MEMORY in PLCC32 INTRODUCTION The M28F101 is a 1 Megabit FLASH MEMORY organised as 128K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially developed for flash memory products. The memory features a fast 100ns access time, very low