Untitled
Abstract: No abstract text available
Text: E/M47F010 1024K Bit CMOS Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 128K Byte Flash Erasable Non• Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 ps max rn -5 5 °C to +125°C Temp Read M47F010
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OCR Scan
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PDF
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E/M47F010
1024K
M47F010)
E47F010)
MD400084/-
E/M47F010
47F010
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Untitled
Abstract: No abstract text available
Text: E /M 4 7 F 0 1 0 1024KBit CMOS Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 128K Byte Rash Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225fjs max rn -5 5 °C to +125°C Temp Read M47F010
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OCR Scan
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PDF
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1024KBit
225fjs
M47F010)
E47F010)
MD400084/-
E/M47F010
E/M47F010
47F010
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AOI32
Abstract: No abstract text available
Text: SEEÚ TECHNOL OGY INC 11E I> • flina33 Q0027M4 0 E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features ■ 64K Byte FLASH Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225ps max
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OCR Scan
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PDF
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flina33
Q0027M4
E/M47F512
225ps
M47F512)
E47F512)
MD400084/·
ail1233
0QG27S3
AOI32
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Untitled
Abstract: No abstract text available
Text: SEE<3 TECHNOLOGY INC HE D ainsaa q o q s 7ö 7 ? E/M48F010 PRELIMINARY DATA SHEET T -4 6 -1 3 -2 7 Ordering Information D M 48F010 ~ r Pickag» Typ* ~ T Temperatur« Rang« 1 D*vlc* D » Ceramic Dip E - - 4 0 to +85°C 128KX8FLASH EEPROM L « Ceramic Leadess Chip
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OCR Scan
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PDF
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E/M48F010
48F010
128KX8FLASH
MD400069/A
ains33
E/M47F01
E/M47F010
E/M47F010
MD400084/-
Q002775
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