M48Z128 Search Results

M40Z300

Abstract: M48Z128 M48Z128V M48Z128Y SOH28
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

ram module 94v-0

Abstract: 94V-0* RAM E89556
Contextual Info: File E89556 Vol. 1 Sec. 2 Page 1 and Report Issued: 10-07-92 DESCRIPTION PRODUCT COVERED: * Component - Lithium Battery Powered Integrated Circuits with Lithium battery, Models M48Z34W, M48Z128W, M48Z129W, M48T128W, M48T129W, M48T512W, M48T513W, M48Z512AW, M48Z30W, M48T248W, M48T251W and M48Z2M1W, where

M48Z128

Abstract: M48Z128Y
Contextual Info: M48Z128 M48Z128Y CMOS 128K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER PIN and FUNCTION COMPATIBLE with JEDEC STANDARD 128K x 8 SRAMs

Contextual Info: F Z J ^ 7 i SGS-THOMSON M48Z128 K» ô [iL[imMO(êS_ M48Z128Y 1 Mb (128K x 8) ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

Contextual Info: M48Z128 M48Z128Y ¿= 7 S G S -T H O M S O N ^ 7 # M IE m [i(g]rO M O (§S 1Mb (128K x 8 ZEROPOWER SRAM « INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY • CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

PMDIP32

Contextual Info: M48Z128 M48Z128Y CMOS 128K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER PIN and FUNCTION COMPATIBLE with

M48Z128

Abstract: M48Z128Y SOH28 TSOP32
Contextual Info: M48Z128 M48Z128Y 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT

Contextual Info: M48Z128 M48Z128Y / S T SGS-THOMSON ^ 7# MO K&I(iM®KflD^ CMOS 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWERFAIL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UN­ LIMITED WRITE CYCLES ■ 10 YEAR MINIMUM DATA RETENTION IN THE

Contextual Info: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

M48Z128

Abstract: M48Z128V M48Z128Y SOH28 TSOP32
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

M48Z128

Abstract: M48Z128Y
Contextual Info: M48Z128 M48Z128Y 1 Mbit 128Kb x8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT

SOH28

Abstract: TSOP32 M48Z128 M48Z128V M48Z128Y
Contextual Info: M48Z128 M48Z128Y, M48Z128V 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

M40Z300

Abstract: M48Z128 M48Z128V M48Z128Y D 4242 CP1621
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

M48Z128V

Abstract: M48Z128Y SOH28 TSOP32 M48Z128 M68Z128
Contextual Info: M48Z128 M48Z128Y, M48Z128V 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT

Contextual Info: M48Z128 M48Z128Y 5.0 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

M48Z128

Abstract: M48Z128Y
Contextual Info: M48Z128 M48Z128Y 1Mb 128K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT

AI02169

Abstract: M48Z128 M48Z128Y AI01196
Contextual Info: M48Z128 M48Z128Y 1Mb 128K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

48Z128Y

Abstract: 48z12
Contextual Info: Æ T SGS-THOMSON *7 # . M48Z128 M48Z128Y CMOS 128K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ PIN and FUNCTION COMPATIBLE with

M48Z128

Abstract: M48Z128V M48Z128Y M40Z300
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

M48Z128

Abstract: M48Z128V M48Z128Y AN1012
Contextual Info: M48Z128 M48Z128Y, M48Z128V 5.0 V or 3.3 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

ST L1117

Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
Contextual Info: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS