M54HC20 Search Results

74LS20 ic

Abstract: M54HC20 M54HC20F1R M74HC20 M74HC20B1R M74HC20C1R M74HC20M1R 74Ls20 truth table
Contextual Info: M54HC20 M74HC20 DUAL 4-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 8 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: M54HC20 M74HC20 SGS-THOMSON G l DUAL 4-INPUT NAND GATE HIGH SPEED tPD = 10 ns TYP. at VCc = 5V LOW POWER DISSIPATION ICC = 1 *A (MAX.) at T a = 2 5 °C HIGH NOISE IM M U N ITY V NIH = V NIL = 2 8 % V q c (MIN.) O U TPU T DRIVE CAPABILITY 10 LSTTL LOADS

74LS20 ic

Abstract: M74HC20 M74HC20B1R M74HC20C1R M74HC20M1R M54HC20 M54HC20F1R
Contextual Info: M54HC20 M74HC20 DUAL 4-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 8 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

M54HC20D1

Abstract: M54HC20K M54HC20 M54HC20D
Contextual Info: M54HC20 RAD-HARD DUAL 4-INPUT NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 9ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

74HC20

Contextual Info: M54HC20 M74HC20 SGS-TffOMSON li gTFl@iQ(gi DUAL 4-INPUT NAND GATE HIGH SPEED tpo = 10 ns (TYP. at V c c = 5V LOW POWER DISSIPATION lcc = 1pA (MAX.) at Ta = 25°C HIGH NOISE IMMUNITY V nih = V nil = 280/0 VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

74LS20 ic

Abstract: 74HC20 74ls20 pin diagram 54HC 74HC M54HC20 M74HC20
Contextual Info: HS-CMOS INTEGRATED CIRCUITS M54HC20 M74HC20 O PRELIMINARY DATA DUAL 4-INPUT NAND GATE DESCRIPTION Th e M 5 4 /7 4 H C 2 0 is a high speed C M O S D U A L 4 -IN P U T N A N D G A TE fabricated in silicon gate C 2M O S technology. It has th e sam e high speed

Contextual Info: SCS-THOMSON lÄ g«LiM (s «S M54HC20 M74HC20 DUAL 4-INPUT NAND GATE • HIGH SPEED tpo = 8 ns (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 *C ■ HIGHNOISE IMMUNITY V nih = V n il = 28 % V c c (MIN.) ■ OUTPUT DRIVE CAPABILITY

74HC20 truth table

Abstract: 74HC20 equivalent LC109 74ls20 14 PIN 74HC20
Contextual Info: r z 7 SG S-T H O M SO N M54HC20 ^ 7 # M ^ ( » [ i û T O C S _ M74HC20 DUAL 4-INPUT NAND GATE • HIGH SPEED tpD = 8 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 1 JiA (MAX.) AT T a = 25 ’C . HIGH NOISE IMMUNITY V n ih = V nil = 28 % V c c (MIN.)

940900701F

Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

M54HC132

Abstract: M54HC595KG M54HC138KG 920112001F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics

54HC4053

Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

940900703F

Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

Contextual Info: SbE J> *7 # • 7t12clE37 003^770 177 « S G T H S C S -T H O M S O N M 54H C 20 [j ÆO [^ ô)tlLi©TO^O©i_ M 7 4 H C 2 0 S 6 S -T H O M S O N DUAL 4-INPUT NAND GATE ■ HIGH SPEED tpD = 10 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION

940806401F

Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics