MA137 Search Results

Contextual Info: 2SK1033 MA111 Switching Diodes MA137 Silicon epitaxial planer type 0.28±0.05 Small SS-Mini type package with two incorporated elements, enabling high-density mounting Unit : mm 1 Series connection in package 3 2 Parameter Unit 80 VR +0.05 +0.05 Rating Symbol

MA137

Abstract: MA3S137
Contextual Info: Switching Diodes MA3S137 MA137 Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.80±0.05 0.28±0.05 Single Symbol Rating Unit VR 80 V VRM 80 V IF 100 mA Series Single Peak forward current 1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S137 (MA137) Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.80±0.05 0.28±0.05 Single Symbol Rating Unit VR 80 V VRM 80 V IF 100 mA Series Single

MA137

Abstract: MA3S137
Contextual Info: Switching Diodes MA3S137 MA137 Silicon epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit : mm For high-speed switching circuits 0.12+0.03 –0.01 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Single Peak forward

Double high-speed switching diode

Abstract: diode 104 MARKING 103 MA137 MA3S137
Contextual Info: Switching Diodes MA3S137 MA137 Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.80±0.05 0.28±0.05 Single Symbol Rating Unit VR 80 V VRM 80 V IF 100 mA Double Single Peak forward current Single 1: Anode 1 2: Cathode 2 3: Cathode 1

MA137

Abstract: MA3S137
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S137 (MA137) Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.80±0.05 0.28±0.05 • Features (0.44) M Di ain sc te on na tin nc ue e/ d 0.12+0.05

SSMini

Contextual Info: Panasonic S w itc h in g Diodes MA137 Silicon epitaxial planer type Unit : mm For high-speed switching circuits 0.80 0 .8 0 ± 0.05 I Features Small SS-Mini type package with two incorporated elements, en­ abling high-density mounting Series connection in package

MA137

Abstract: MA3S137
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S137 (MA137) Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.80±0.05 0.28±0.05 Single Symbol Rating Unit VR 80 V VRM 80 V IF 100 mA Series Single

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S137 (MA137) Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.80±0.05 0.28±0.05 Single IF Series Single Peak forward current Unit 80 V 80 V 100 mA

MA137

Abstract: MA3S137
Contextual Info: Switching Diodes MA3S137 MA137 0.28 ± 0.05 Silicon epitaxial planar type • Super-small SS-mini type package contained two elements, allowing high-density mounting • Two diodes are connected in series in the package 80 V VRM 80 V 0.28 ± 0.05 0.28 ± 0.05

MA137

Abstract: MA3S137
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3S137 (MA137) Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.80±0.05 0.28±0.05 • Features (0.44) M Di ain sc te on na tin nc ue e/ d 0.12+0.05

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA164

Abstract: MA373 7400 fan-in MA154 T-42-11-05
Contextual Info: RAYTHEON-. 7597360 SEMICONDUCTOR RAYTHEON/ bb Î Ë | ?ST?3t.O 0 D D S D S 7 SEMICONDUCTOR Preliminary Product Specifications Configurable G ate Arrays 66C T 05057 - 7-U - C G A 50L15/35L12 Raytheon CGA 50L15/35L12 Oxide Isolated ISL Bipolar Gate Arrays